MBR12060CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR12060CTR is a silicon power Schottky diode module featuring a twin tower package. It provides a repetitive peak reverse voltage of 60 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.75 V at 60 A and a thermal resistance of 0.80 °C/W per leg. It supports a peak forward surge current of 800 A and operates within a junction temperature range of -55°C to 150°C.

Diode Arrays Feature Summary

• High surge capability for handling transient electrical loads
• Twin tower package design for efficient mounting
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• Power rectification in industrial equipment
• DC-DC converter circuits
• Free-wheeling diodes in motor drives

Diode Arrays Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm lead time and availability status, as supply conditions may change. Ensure the component meets all required environmental and safety standards for your intended application before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component based on its 60 V reverse voltage rating and 120 A continuous current capacity. Consider the 0.80 °C/W thermal resistance for heat sink sizing and verify that the twin tower package fits the mechanical constraints of the target assembly.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 120 A current rating and twin tower package form factor across models.

Diode Arrays Replacement Considerations

Compatible substitutes include MBR12045CTR and MBR12080CTR from the same series, provided their respective voltage ratings align with the circuit requirements.