Diode Arrays MBR200100CTR product image

MBR200100CTR

$63.89
  • Description:DIODE MOD SCHOT 100V 200A 2TOWER
  • Series:-

SKU:a176f5d850ae Category: Brand:

  
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MBR200100CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR200100CTR

  • Description:DIODE MOD SCHOT 100V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR200100CTR

MBR200100CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR200100CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 200 A per package. It features a Twin Tower screw-mount package with a maximum forward voltage of 0.84 V at Tj = 100 °C. The device supports an operating temperature range from -55 °C to +150 °C, with a thermal resistance of 0.45 °C/W per leg. It offers high surge capability with a peak forward surge current of 1500 A.

Diode Arrays Feature Summary

  • High surge current capability
  • Twin Tower package design
  • Not ESD sensitive

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm lead orientation, as datasheets indicate 'R' devices have reversed leads. Confirm the exact voltage rating (100V) matches the application requirements within the 45V to 100V series range. Ensure thermal management solutions account for the specified junction-to-case thermal resistance.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and low forward voltage drop at elevated temperatures. The Twin Tower package facilitates efficient heat dissipation through screw mounting. Consider the 1500 A surge rating for inrush current handling. Verify that the 100 V reverse voltage provides adequate margin for the circuit's peak inverse voltage.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon Schottky diodes from GeneSiC Semiconductor. The series covers voltage ratings from 45 V to 100 V, all sharing a common 200 A current rating and Twin Tower packaging. It serves as a high-performance alternative to standard PN junction rectifiers in medium-power industrial applications.

Diode Arrays Replacement Considerations

Direct replacements include other variants in the MBR200 series such as MBR20045CT or MBR20060CT if lower voltage ratings are acceptable. Ensure any substitute maintains the Twin Tower package and similar thermal characteristics.

MBR200100CTRMBR200100CTR
$63.89
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