MBR20035CT

$63.89

Description：DIODE MOD SCHOTT 35V 200A 2TOWER
Series：-

SKU:6f3e9bc8fb01 Category: Diode Arrays Brand: GeneSiC Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MBR20035CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20035CT

Description：DIODE MOD SCHOTT 35V 200A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：35 V
Current - Average Rectified (Io) (per Diode)：200A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：5 mA @ 20 V
Operating Temperature - Junction：-
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR20035CT

MBR20035CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR20035CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 200 A per package and supports repetitive peak reverse voltages up to 35 V. The device exhibits a maximum forward voltage of 0.70 V per leg at 25 °C and offers a peak forward surge current capability of 1500 A per leg. Thermal resistance from junction to case is rated at 0.45 °C/W per leg, with an operating temperature range spanning -55 °C to +150 °C.

Diode Arrays Feature Summary

High surge current capability for transient protection
Electrically isolated base plate design
Not sensitive to electrostatic discharge

Diode Arrays Applications

Low voltage high frequency inverters
Free wheeling applications
Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status and check for any discontinuation notices or lifecycle changes before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component based on its 200 A continuous current rating and 35 V blocking voltage requirements. Ensure thermal management solutions accommodate the 0.45 °C/W junction-to-case thermal resistance for reliable operation within the specified temperature limits.

Diode Arrays Part Context

This component belongs to the MBR200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package structure designed for robust performance in high-current power conversion applications requiring low forward voltage drop.