MBR2090CT-M3/4W

Diode Arrays Overview

The MBR2090CT-M3/4W is a dual high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a TO-220AB package with a tube delivery mode (code 4W). The device supports a maximum repetitive peak reverse voltage of 90 V and provides a total average forward rectified current of 20 A per diode at a case temperature of 133 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.80 V at 10 A and 25 °C, and a peak forward surge current capability of 150 A. The component operates within a junction and storage temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for lower power losses and high efficiency
• Features low forward voltage drop and high frequency operation capabilities
• Provides high forward surge current capability

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in power circuits
• DC/DC converters
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging format containing 50 units per tube as documented in the Vishay datasheet. Confirm that the base part number MBR2090CT-M3 indicates compliance with halogen-free, RoHS standards and commercial grade specifications. Ensure technical requirements align with the provided thermal resistance and voltage ratings before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring a dual Schottky rectifier with a 90 V blocking voltage and 20 A continuous current handling per diode. The TO-220AB through-hole package facilitates standard mounting techniques. Consider the thermal resistance values and derating curves to ensure reliable operation under expected load conditions and ambient temperatures.

Diode Arrays Part Context

This component belongs to the MBR201xxCT series of dual high voltage Trench MOS Barrier Schottky rectifiers from Vishay. The series includes variants with different reverse voltage ratings, such as the MBR20100CT-M3 which offers 100 V blocking capability. These devices are engineered for robust performance in demanding power conversion environments.

Diode Arrays Replacement Considerations

MBR20100CT-M3/4W

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the MBR2090CT-M3?

The maximum repetitive peak reverse voltage (VRRM) is 90 V.

Does the M3 suffix indicate environmental compliance?

Yes, the M3 suffix indicates that the product is halogen-free, RoHS compliant, and meets the JESD 201 class 1A whisker test.

What is the operating junction temperature range?

The operating junction and storage temperature range is -65 to +150 °C.