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MBR20H100CT-E1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARR SCHOT 100V 10A TO2203. Review the specifications below when checking this part for your BOM.
The MBR20H100CT-E1 is a high voltage dual Schottky rectifier manufactured by Diodes Incorporated. It features a common cathode configuration with two independent diode legs housed in TO-220-3 packages. The device supports a repetitive peak reverse voltage of 100 V and provides an average rectified forward current of 10 A per leg, totaling 20 A. Maximum instantaneous forward voltage drop is rated at 0.77 V at +25°C for each leg. The component operates within a junction temperature range up to +175°C and includes guard-ring technology for stress protection.
Verify the specific package variant required, as the datasheet lists both standard TO-220-3 (marked T-E1) and low-profile TO-220F-3 (marked TF-E1). Confirm that the E1 suffix denotes RoHS compliance and lead-free construction. Ensure thermal management aligns with the specified junction-to-case resistance values for the selected package type during installation.
Select this component for medium voltage applications requiring low switching losses and minimal noise generation. Evaluate thermal constraints carefully, as the maximum average forward current decreases significantly as case temperature rises above +162°C. Consider the TO-220F-3 option if space limitations exist, noting its slightly higher thermal resistance compared to the standard TO-220-3 package.
This part belongs to the MBR20H100C series of high voltage power Schottky rectifiers from Diodes Incorporated. The series is engineered for efficiency in high-frequency circuits where low forward voltage and fast switching characteristics are critical. The E1 suffix specifically identifies the RoHS-compliant, lead-free manufacturing version of the device.
MBR20H100CT-G1
The maximum operating junction temperature is +175°C.
The total forward current is 20 A, distributed as 10 A per individual diode leg.
Yes, the device incorporates a guard-ring structure designed to provide stress protection.
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