Diode Arrays MBR2X030A045 product image

MBR2X030A045

$38.57
  • Description:DIODE MOD SCHOTT 45V 60A SOT-227
  • Series:-

SKU:4e236dfe4dad Category: Brand:

  
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MBR2X030A045 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 60A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X030A045

  • Description:DIODE MOD SCHOTT 45V 60A SOT-227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):60A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 45 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X030A045

MBR2X030A045

Diode Arrays Overview

The MBR2X030A045 is a silicon Schottky rectifier module manufactured by GeneSiC Semiconductor. It features a Twin Tower configuration with an electrically isolated base plate in a SOT-227 package. The device supports a maximum repetitive peak reverse voltage of 45 V and provides an average forward current of 60 A per leg. Key electrical parameters include a maximum instantaneous forward voltage of 0.70 V at 30 A and 25 °C, and a peak forward surge current capability of 500 A per leg. The module operates within a junction temperature range of -40 to 150 °C and offers an isolation voltage of 2500 Vrms.

Diode Arrays Feature Summary

  • High surge current capability for robust transient handling
  • Electrically isolated base plate for enhanced safety
  • Low forward voltage drop characteristics
  • ESD insensitive design

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in power supplies
  • Inverter circuits
  • Charger applications

Diode Arrays Procurement Notes

Verify the specific manufacturer source when ordering, as GeneSiC Semiconductor products may be distributed under various branding agreements. Confirm that the received component matches the MBR2X030A045 marking and SOT-227 package dimensions. Ensure compliance with the specified thermal management requirements to maintain operation within the -40 to 150 °C junction temperature range during deployment.

Diode Arrays Selection Notes

Select this module for applications requiring high efficiency and low conduction losses at 45 V blocking levels. The twin-tower design allows for independent thermal management of each leg. Consider the 1.20 °C/W thermal resistance per leg when designing heatsinking solutions. The 500 A surge rating provides significant margin for inrush current scenarios common in industrial power systems.

Diode Arrays Part Context

This component belongs to the MBR2X series of Schottky diode modules from GeneSiC Semiconductor. The series utilizes silicon technology to deliver high-performance rectification in compact packages. The MBR2X030A045 specifically targets low-voltage, medium-current applications where fast switching and low forward voltage are critical for system efficiency.

Diode Arrays Replacement Considerations

Direct replacements must match the 45 V rating, 60 A per leg current capacity, and SOT-227 package outline. Verify that substitute components offer comparable thermal resistance and isolation voltage specifications to ensure circuit reliability without redesign.

MBR2X030A045MBR2X030A045
$38.57
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