Diode Arrays MBR300100CT product image

MBR300100CT

$66.98
  • Description:DIODE MOD SCHOT 100V 150A 2TOWER
  • Series:-

SKU:c7c75089dc20 Category: Brand:

  
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MBR300100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 150A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR300100CT

  • Description:DIODE MOD SCHOT 100V 150A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 150 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:8 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR300100CT

MBR300100CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR300100CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 100 V and an average forward current rating of 300 A per leg. The device exhibits a maximum forward voltage of 0.84 V at Tj = 25 °C and a thermal resistance from junction to case of 0.40 °C/W per leg. It supports an operating temperature range from -55 °C to +150 °C and offers a peak forward surge current capability of 2000 A.

Diode Arrays Feature Summary

  • High surge current capability for robust transient handling
  • ESD insensitive design for simplified assembly
  • Twin Tower package configuration for efficient mounting

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific voltage variant required, as the MBR300 series includes ratings from 45 V to 100 V. Confirm terminal orientation, noting that devices with the 'R' suffix have reversed leads compared to standard configurations. Ensure compatibility with the Twin Tower mounting style and verify RoHS compliance status through official manufacturer documentation before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low forward voltage drop. The 0.40 °C/W thermal resistance facilitates effective heat dissipation in compact designs. Consider the 2000 A surge rating for systems with significant inrush currents. Verify that the 100 V blocking voltage aligns with the circuit's peak reverse voltage requirements under all operating conditions.

Diode Arrays Part Context

This part belongs to the MBR300 series of silicon Schottky diode modules manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package to accommodate high current loads. The MBR300100CT specifically denotes the 100 V voltage rating within this lineup, which also includes variants such as the MBR30045CT and MBR30060CT.

Diode Arrays Replacement Considerations

Direct substitutes include other MBR300 series variants like the MBR30080CT or MBR30060CT if lower voltage ratings are acceptable. Verify pinout compatibility, particularly regarding lead reversal in 'R' suffix versions. Cross-reference thermal resistance and surge current capabilities to ensure equivalent performance in the target application.

MBR300100CTMBR300100CT
$66.98
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