MBR300200CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR300200CT is a silicon Schottky diode module featuring a twin tower package configuration. It provides a repetitive peak reverse voltage of 200 V and an average forward current rating of 300 A per package. The device exhibits a maximum forward voltage of 0.92 V at 150 A and a thermal resistance junction-case of 0.40 °C/W per leg. Operating temperatures range from -55°C to +150°C, with a peak forward surge current capability of 2000 A.

Diode Arrays Feature Summary

• High surge current capability for robust power handling
• Twin tower package design for efficient mounting
• Non-ESD sensitive construction

Diode Arrays Applications

• High-frequency switching power supplies
• Free-wheeling rectification in motor drives
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal orientation and exact electrical ratings. Confirm RoHS compliance status and check for any product change notices or obsolescence announcements prior to finalizing procurement orders.

Diode Arrays Selection Notes

Select this component based on its 200 V blocking voltage and 300 A current capacity requirements. Ensure the application environment supports the specified operating temperature range and that the thermal management system can handle the junction-to-case thermal resistance effectively.

Diode Arrays Part Context

This module belongs to the MBR300 series, which includes variants ranging from 150 V to 200 V reverse voltage. The series utilizes silicon technology and is designed for high-power applications requiring fast recovery characteristics and low forward voltage drop in a rugged twin tower package.

Diode Arrays Replacement Considerations

Cross-reference with other MBR300 series parts like MBR300150CT for similar form factors. Verify that substitute components match the twin tower package dimensions and electrical specifications exactly.