Diode Arrays MBR30030CT product image

MBR30030CT

$66.98
  • Description:DIODE MOD SCHOTT 30V 150A 2TOWER
  • Series:-

SKU:9f861f692d78 Category: Brand:

  
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MBR30030CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 150A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30030CT

  • Description:DIODE MOD SCHOTT 30V 150A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 150 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:8 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30030CT

MBR30030CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR30030CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 30 V and an average forward current of 300 A per package. It features a Twin Tower screw-mount package with three terminals. The device supports an operating junction temperature range from -55 °C to +150 °C. Electrical characteristics include a maximum forward voltage of 0.70 V at Tj = 25 °C and a thermal resistance (junction-case) of 0.40 °C/W per leg. Peak forward surge current capability is 2000 A per leg.

Diode Arrays Feature Summary

  • High surge current capability designed for demanding power applications
  • Twin Tower package configuration providing robust mechanical mounting
  • Non-ESD sensitive construction for simplified handling

Diode Arrays Applications

  • High-current DC power supply rectification
  • Free-wheeling diodes in motor drive circuits
  • Low-voltage high-amperage conversion stages

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variations may exist between standard CT and CTR configurations. Confirm terminal orientation requirements, noting that devices with an 'R' suffix typically feature reversed leads. Ensure compatibility with existing thermal management systems given the specified thermal resistance values. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high average current handling at low reverse voltages. The 30 V rating suits applications where voltage drops must be minimized to improve efficiency. Evaluate the thermal performance based on the 0.40 °C/W junction-to-case resistance to determine appropriate heatsinking. Consider the physical dimensions of the Twin Tower package for PCB layout and enclosure constraints.

Diode Arrays Part Context

This module belongs to the MBR300 series of silicon power Schottky diodes, which spans ratings from 20 V to 40 V. The series utilizes a standardized Twin Tower package format to maintain mechanical consistency across different voltage variants while delivering up to 300 A of continuous forward current. This specific model represents the 30 V variant within that lineup.

Diode Arrays Replacement Considerations

Direct replacements within the same family include the MBR30020CT and MBR30040CT, provided the voltage ratings align with circuit requirements. Verify lead orientation differences if substituting with 'R' suffix versions. Cross-brand equivalents require matching current, voltage, and thermal specifications.

MBR30030CTMBR30030CT
$66.98
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