MBR30100CTH

Diode Arrays Overview

The MBR30100CTH is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a single diode configuration housed in a TO-220AB package with through-hole mounting. The device supports an average forward current of 30 A and a repetitive peak reverse voltage of 100 V. Key electrical characteristics include a maximum forward voltage of 940 mV, a peak forward surge current rating of 200 A, and a maximum reverse leakage current of 200 uA. The component operates within a temperature range from -55 °C to +150 °C junction temperature.

Diode Arrays Feature Summary

• Utilizes silicon Schottky barrier technology for majority carrier conduction.
• Designed for high efficiency with low forward voltage drop characteristics.
• Capable of handling high surge currents for robust circuit protection.

Diode Arrays Applications

• AC/DC switching adapters
• Free-wheeling diodes in low voltage high frequency inverters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact mechanical and electrical tolerances. Confirm RoHS compliance status directly with the supplier or datasheet. Ensure the TO-220AB lead form matches the target PCB footprint requirements before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling at low voltage drops. The TO-220AB package provides adequate thermal dissipation for moderate power levels. Compare the 100 V reverse voltage rating against the system's peak inverse voltage to ensure sufficient safety margins under all operating conditions.

Diode Arrays Part Context

This part belongs to the MBR30xxCT series of Schottky rectifiers from Taiwan Semiconductor. The series offers various voltage ratings while maintaining a consistent 30 A current capacity. The TO-220AB packaging standardizes thermal management and mechanical integration across multiple product variants within the same family line.

Diode Arrays Replacement Considerations

Cross-reference with other manufacturers offering identical 30 A / 100 V specifications in TO-220AB packages. Verify pinout compatibility and thermal resistance values when substituting with parts from different suppliers to ensure equivalent performance.

Diode Arrays FAQ

What is the maximum junction temperature for the MBR30100CTH?

The maximum operating and storage junction temperature is +150 °C.

Does this component have a built-in snubber diode?

No, the MBR30100CTH is a single diode configuration without an integrated snubber.