Diode Arrays MBR30200PTHC0G product image

MBR30200PTHC0G

  • Description:DIODE ARR SCHOT 200V 30A TO247AD
  • Series:-

SKU:6fc03ef0580a Category: Brand:

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MBR30200PTHC0G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 200V 30A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30200PTHC0G

  • Description:DIODE ARR SCHOT 200V 30A TO247AD
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR30200PTHC0G

MBR30200PTHC0G

Diode Arrays Overview

The MBR30200PTHC0G is a dual common cathode Schottky barrier rectifier from the Taiwan Semiconductor MBR30xxPT series. It features a TO-247AD (TO-3P) package and provides a maximum average forward current of 30 A with a repetitive peak reverse voltage of 200 V. The device incorporates a guard ring structure for overvoltage protection and meets AEC-Q101 qualification standards. Key electrical parameters include a maximum non-repetitive peak forward surge current of 200 A, a junction temperature range of -55°C to +150°C, and a typical junction-to-case thermal resistance of 1.4 °C/W.

Diode Arrays Feature Summary

  • AEC-Q101 qualified automotive-grade reliability
  • Guard ring structure for enhanced overvoltage protection
  • Low power loss and high efficiency operation
  • High surge current capability

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • DC to DC converters
  • Adapters
  • Monitor equipment
  • Television sets

Diode Arrays Procurement Notes

Verify that the ordering suffix 'H' confirms AEC-Q101 qualification status as documented in the official datasheet. Ensure the component matches the specific 200V rating indicated by the '200' segment of the part number. Confirm compliance with RoHS directives and halogen-free requirements according to IEC 61249-2-21 definitions before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and robust overvoltage protection in low voltage, high frequency environments. The dual common cathode configuration supports freewheeling and polarity protection circuits. Verify that the 200V reverse voltage rating aligns with the circuit's peak inverse voltage requirements and that the TO-247AD package fits the thermal and mechanical constraints of the design.

Diode Arrays Part Context

This device belongs to the MBR30xPT series manufactured by Taiwan Semiconductor. The series encompasses various voltage ratings ranging from 35V to 200V, all sharing the same 30A current capacity and TO-247AD package form factor. The 'H' suffix specifically denotes AEC-Q101 qualification, distinguishing it from standard industrial grade versions within the same product family.

Diode Arrays Replacement Considerations

Cross-reference with other MBR30200PT variants from different manufacturers ensuring identical TO-247AD pinout and 200V/30A ratings. Verify if AEC-Q101 qualification is mandatory for the application; if so, ensure the substitute also carries this specific certification.

Diode Arrays FAQ

What does the 'H' suffix indicate in the MBR30200PTHC0G part number?

The 'H' suffix indicates that the device is qualified according to the AEC-Q101 automotive electronic council standard.

What is the maximum junction temperature for this component?

The maximum operating junction temperature (TJ MAX) is specified as 150°C.

How is the internal configuration of the MBR30200PT structured?

It contains two independent Schottky diodes configured as a dual common cathode arrangement within a single TO-247AD package.

MBR30200PTHC0GMBR30200PTHC0G

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