Diode Arrays MBR30H100CT product image

MBR30H100CT

$0.63
  • Description:DIODE ARR SCHOT 100V 30A TO220AB
  • Series:-

SKU:9354d59000de Category: Brand:

  
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MBR30H100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 100V 30A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30H100CT

  • Description:DIODE ARR SCHOT 100V 30A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:980 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30H100CT

MBR30H100CT

Diode Arrays Overview

The MBR30H100CT is a dual-anode common-cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a TO-220AB package with a maximum repetitive peak reverse voltage (VRRM) of 100 V and an average forward current (IF) of 30 A. The device supports a surge peak forward current (IFSM) of 150 A and operates within a junction temperature range of -55°C to +175°C. Electrical characteristics include a typical forward voltage of 0.85 V at 15 A and 25°C, with a maximum reverse current of 10 µA at rated voltage.

Diode Arrays Feature Summary

  • Guard ring structure provides overvoltage protection
  • High efficiency operation with low power loss
  • High surge current capability for robust performance

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • DC to DC converters

Diode Arrays Procurement Notes

Verify the specific ordering code against project requirements. The standard suffix denotes general grade, while the 'H' suffix indicates AEC-Q101 qualification. Confirm package type and packing quantity match the bill of materials before finalizing orders.

Diode Arrays Selection Notes

Select this component for high-frequency rectification in power conversion circuits requiring low forward voltage drop. Ensure thermal management accommodates the junction-to-case thermal resistance. Verify that the 100 V reverse voltage rating exceeds the circuit's peak inverse voltage under all operating conditions.

Diode Arrays Part Context

This part belongs to the MBR30 series of Schottky barrier rectifiers from Taiwan Semiconductor. It utilizes silicon technology to deliver high current density in a through-hole TO-220AB package. The design focuses on minimizing conduction losses while maintaining reliability in demanding power supply environments.

Diode Arrays Replacement Considerations

Cross-reference pinouts and electrical ratings when substituting. Verify that alternative components meet or exceed the 30 A current and 100 V voltage specifications. Check package compatibility and thermal characteristics to ensure equivalent performance in the existing footprint.

Diode Arrays FAQ

What does the 'H' suffix indicate in the ordering code?

The 'H' suffix in the ordering code MBR30H100CTH signifies that the device is qualified according to the AEC-Q101 automotive standard.

Is the MBR30H100CT RoHS compliant?

Yes, the datasheet explicitly states that the MBR30H100CT is RoHS compliant and halogen-free according to IEC 61249-2-21.

What is the maximum junction temperature for this device?

The maximum operating junction temperature (TJ MAX) for the MBR30H100CT is +175°C.

MBR30H100CTMBR30H100CT
$0.63
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