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MBR30H150CTG is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR SCHOTT 150V 15A TO-220. Review the specifications below when checking this part for your BOM.
The MBR30H150CTG is a Switch-mode Power Rectifier manufactured by onsemi, featuring dual common-cathode Schottky barrier diodes in a TO-220 package. It provides a peak repetitive reverse voltage of 150 V and an average rectified forward current of 30 A total (15 A per leg). The device exhibits low forward voltage characteristics, with typical values ranging from 0.55 V to 0.98 V depending on temperature and current conditions. It supports a nonrepetitive peak surge current of 200 A and operates within a junction temperature range of -20°C to +150°C.
Verify the specific ordering suffix 'G' confirms lead-free and RoHS compliance status as documented in the manufacturer's datasheet. Confirm the package type matches the required mechanical footprint, distinguishing between standard TO-220 and TO-220FP variants if applicable. Ensure the component meets all maximum ratings for your specific thermal environment before finalizing procurement.
Select this component for applications requiring robust switching power rectification at 150 V. Consider the thermal resistance parameters when designing heat dissipation solutions, particularly for continuous operation near the maximum junction temperature limit. Evaluate the forward voltage drop against system efficiency targets under expected load currents.
This part belongs to the MBR series of Schottky Barrier Rectifiers designed for switch-mode power supplies. It utilizes silicon technology to provide fast recovery characteristics and low power loss compared to standard PN junction rectifiers. The dual common-cathode configuration allows for efficient use in full-wave rectification circuits without requiring external diode arrangements.
MBRF30H150CTG
The maximum operating junction temperature is +150°C.
The total average rectified forward current is 30 A, distributed as 15 A per diode leg.
Yes, the device incorporates a guard-ring structure specifically designed for stress protection.
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