MBR400150CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR400150CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 150 V and an average forward current rating of 400 A per package. The device exhibits a maximum forward voltage of 0.88 V at 200 A and 25 °C, with a thermal resistance junction-case of 0.35 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability for robust performance under transient conditions
• Twin Tower package design for efficient mounting and heat dissipation
• Not ESD sensitive for simplified handling procedures

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation within the rated temperature range.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low forward voltage drop. Evaluate thermal constraints based on the 0.35 °C/W junction-case resistance. Consider the Twin Tower package dimensions for mechanical fit. Verify that the 150 V reverse voltage rating exceeds the circuit's peak reverse voltage requirements.

Diode Arrays Part Context

This part belongs to the MBR400 series of silicon power Schottky diodes. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. These modules are designed for high-efficiency power conversion applications requiring high surge current capability and reliable operation at elevated temperatures.

Diode Arrays Replacement Considerations

Cross-reference with MBR400200CT(R) for higher voltage ratings. Verify pinout compatibility when substituting devices with reversed lead configurations indicated by the 'R' suffix.