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MCP14E11-E/MF
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8DFN
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply：4.5V ~ 18V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：3A, 3A
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：25ns, 25ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：8-DFN-S (6x5)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MCP14E11-E/MF is a dual high-speed power MOSFET driver manufactured by Microchip Technology. It features a 3A peak output current capability and operates within a supply voltage range of 4.5V to 18V. The device provides inverting outputs with rise and fall times of approximately 14ns and 17ns, respectively. It is housed in an 8-lead DFN-S (6x5mm) package and supports an operating temperature range from -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for two MOSFETs
- High-current drive capability suitable for fast switching applications
- Integrated enable functionality for power management
- Extended temperature rating for automotive and industrial environments
Applications
- Automotive engine control modules
- Industrial motor drives
- Power supply inverters
- Battery management systems
Procurement Notes
Verify the specific suffix 'MF' corresponds to the 8-lead DFN-S package configuration as documented in official Microchip datasheets. Confirm AEC-Q100 qualification status if automotive compliance is required. Ensure the ordering part number matches the exact pinout and thermal pad requirements for the target PCB footprint.
Selection Notes
Select this component when dual isolated gate driving is required with high current capacity. Compare against the MCP14E10 series for non-inverting options or the MCP14E9 for different package constraints. Evaluate the 3A output current against the total gate charge of the target MOSFETs to ensure adequate switching speed without excessive heat generation.
Part Context
This device belongs to the MCP14E family of MOSFET drivers designed for robust performance in harsh environments. It complements other variants like the MCP14E11-E/P which offers through-hole packaging. The family emphasizes reliability and speed for power conversion applications.
Replacement Considerations
The MCP14E11-E/P serves as a pin-compatible alternative offering the same electrical specifications but in a PDIP-8 package. Verify that the thermal dissipation characteristics of the replacement package meet the application's thermal design requirements.
