MCPF1K4N95SH-BP

Single FETs, MOSFETs Overview

The MCPF1K4N95SH-BP is an N-Channel Super-Junction Power MOSFET manufactured by Micro Commercial Components. It features a drain-source voltage (VDS) of 950 V and a continuous drain current (ID) of 3.4 A at case temperature. The device offers a maximum power dissipation of 46.8 W at case temperature and operates within a junction temperature range of -55°C to +150°C. It is housed in a TO-220F through-hole package, designed for high-voltage applications utilizing super-junction technology.

Single FETs, MOSFETs Feature Summary

• Utilizes Super-Junction technology optimized for high-voltage performance
• Epoxy encapsulation meets UL 94 V-0 flammability rating

Single FETs, MOSFETs Applications

• High-voltage power supply circuits
• Industrial motor control systems
• Switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BP indicates the standard packaging configuration as defined by MCC. Confirm that the TO-220F package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 46.8 W case temperature dissipation limit. Cross-reference the datasheet for exact gate charge and threshold voltage parameters relevant to your switching frequency.

Single FETs, MOSFETs Selection Notes

Select this component when a high breakdown voltage of 950 V is required with moderate current handling capabilities. The Super-Junction architecture provides improved efficiency compared to conventional planar MOSFETs in high-voltage scenarios. Consider the TO-220F package for through-hole mounting and ease of heatsinking in industrial or commercial power conversion designs.

Single FETs, MOSFETs Part Context

This part belongs to MCC's lineup of N-Channel Power MOSFETs leveraging Super-Junction technology. It is distinct from lower voltage devices like the MCP5D4N06YHE3-BP, which offers 60 V and significantly higher current but lower voltage ratings. The MCPF1K4N95SH-BP targets applications requiring robust high-voltage isolation and switching performance.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before attempting substitution with other high-voltage MOSFETs.