MJ11022

Single Bipolar Transistors Overview

The onsemi MJ11022 is a high-power NPN Darlington transistor designed for demanding power electronics applications. It features a maximum continuous collector current of 15 A and a collector-emitter sustaining voltage (VCEO(sus)) of 250 Vdc. The device offers a minimum DC current gain (hFE) of 400 at 10 Adc, ensuring efficient drive requirements. With a maximum power dissipation of 150 W, it utilizes a TO-247 through-hole package for robust thermal management. The monolithic construction supports low saturation voltages, making it suitable for general-purpose amplification, low-frequency switching, and motor control systems.

Single Bipolar Transistors Feature Summary

• High DC Current Gain: Provides a minimum hFE of 400 at 10 Adc for efficient base drive.
• High Voltage Capability: Rated for a collector-emitter sustaining voltage of 250 Vdc.
• Robust Power Handling: Supports 15 A continuous collector current with 150 W power dissipation.
• Low Saturation Voltage: Features typical low VCE(sat) to minimize conduction losses.

Single Bipolar Transistors Applications

• General-purpose amplifiers
• Low-frequency switching circuits
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (e.g., G for lead-free/RoHS compliance) against the required datasheet revision. Confirm the package type matches the TO-247 form factor. Ensure the manufacturer source is recognized as onsemi or its authorized predecessor entities to guarantee component authenticity and parameter accuracy.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capability up to 250 V is required alongside substantial current handling. The high current gain simplifies driver circuit design compared to standard bipolar transistors. Consider the thermal resistance of the TO-247 package and ensure adequate heatsinking for continuous operation near the 150 W limit.

Single Bipolar Transistors Part Context

This part belongs to the complementary Darlington silicon power transistor family from onsemi. It serves as the NPN counterpart in high-current, high-voltage power stages. The series is engineered for reliability in industrial power conversion and motor drive environments where robust switching performance is critical.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes within the same voltage and current class include the MJH11021G (150 V rating) and MJH11019G (250 V rating). Verify pinout compatibility and thermal characteristics before substitution to maintain circuit integrity.