Single Bipolar Transistors MJD2955T4G product image

MJD2955T4G

$0.94
  • Description:TRANS PNP 60V 10A DPAK
  • Series:-

SKU:3d914cafdac2 Category: Brand:

  
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MJD2955T4G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 10A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD2955T4G

  • Description:TRANS PNP 60V 10A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
  • Power - Max:1.75 W
  • Frequency - Transition:2MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJD2955T4G

MJD2955T4G

Single Bipolar Transistors Overview

The MJD2955T4G is a PNP epitaxial planar silicon power transistor manufactured by onsemi. It is designed for high-current switching applications and features a maximum continuous collector current of 10 A, a collector-emitter breakdown voltage (VCEO) of 60 V, and a collector-base breakdown voltage (VCBO) of 70 V. The device has a minimum emitter-base breakdown voltage (VEBO) of 5 V and a maximum power dissipation (Pd) of 20 W. It operates within a temperature range of -55°C to +150°C, with a transition frequency (fT) of 2 MHz and a minimum DC current gain (hFE) of 20.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for demanding power switching loads
  • Robust thermal performance allowing operation up to 150°C junction temperature
  • Designed for use in general-purpose amplifier and switching circuits

Single Bipolar Transistors Applications

  • General-purpose amplifiers
  • Power switching circuits
  • Audio output stages

Single Bipolar Transistors Procurement Notes

Verify the component authenticity against official onsemi documentation before integration. Confirm that the TO-252-3 package matches your PCB footprint requirements. Ensure the supply chain source provides valid traceability records. Check for any specific environmental compliance declarations required by your manufacturing standards. Validate that the ordering suffix corresponds to the correct reel or cut tape configuration.

Single Bipolar Transistors Selection Notes

Select this component when a PNP bipolar junction transistor is required for medium-power applications. It serves as a complement to NPN devices like the MJD3055T4G in push-pull configurations. Consider the 10 A current rating and 20 W power dissipation limits during thermal design. The TO-252-3 package offers a balance between current capacity and surface-mount convenience.

Single Bipolar Transistors Part Context

This part belongs to the MJD2955 series of power transistors from onsemi. It is specifically the surface-mount variant packaged in TO-252-3 (DPAK). The series is engineered for robust performance in consumer electronics and industrial control systems where reliable high-current switching is necessary.

Single Bipolar Transistors Replacement Considerations

The KSH2955TM is an alternative PNP transistor from onsemi with identical electrical ratings and the same TO-252-3 package. Verify pinout compatibility and thermal characteristics before substitution.

MJD2955T4GMJD2955T4G
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