Single Bipolar Transistors MJE171 product image

MJE171

  • Description:TRANS PNP 60V 3A TO-126
  • Series:-

SKU:c5edc5784421 Category: Brand:

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MJE171 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE171

  • Description:TRANS PNP 60V 3A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
  • Power - Max:12.5 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE171

MJE171

Single Bipolar Transistors Overview

The MJE171 is a PNP complementary plastic silicon power transistor from the MJE170/180 series, designed for low power audio amplifier and low current high speed switching applications. It features an annular construction for low leakages and meets UL 94 V-0 standards. The device supports a continuous collector current of 3.0 A and a peak collector current of 6.0 A. It operates within a junction temperature range of -65 to +150 °C and offers a DC current gain ranging from 12 to 250 depending on operating conditions.

Single Bipolar Transistors Feature Summary

  • Annular construction engineered to minimize leakage currents
  • High DC current gain suitable for amplification tasks
  • High current-gain bandwidth product optimized for fast switching

Single Bipolar Transistors Applications

  • Low power audio amplifier circuits
  • Low current high speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'G' indicates a lead-free package compliant with RoHS standards. Confirm the TO-225 package style matches the required pinout configuration for your design. Ensure thermal management strategies account for the specified derating curves above 25°C case temperature to maintain reliability under load.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP power transistor with moderate voltage ratings and high-speed switching capabilities. Consider the 80 Vdc collector-emitter sustaining voltage and 3.0 A continuous current limits against your application's peak demands. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for sustained operation.

Single Bipolar Transistors Part Context

This part belongs to the MJE170/180 series of complementary plastic silicon power transistors manufactured by onsemi. The series includes NPN counterparts such as the MJE181. These devices are commonly utilized in consumer electronics and industrial control systems where reliable amplification and switching performance are required.

Single Bipolar Transistors Replacement Considerations

MJE181 (NPN counterpart)

Single Bipolar Transistors FAQ

What is the maximum collector-emitter sustaining voltage for the MJE171?

The maximum collector-emitter sustaining voltage (VCEO(sus)) for the MJE171 is 60 Vdc.

Does the MJE171 support lead-free packaging?

Yes, the MJE171G variant is available in lead-free packages that are RoHS compliant.

MJE171MJE171

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