MMSS8550W-L-TP

Single Bipolar Transistors Overview

The MMSS8550W-L-TP is a PNP silicon plastic-encapsulate transistor manufactured by Micro Commercial Components (MCC). It operates within a junction temperature range of -55°C to +150°C and features a lead-free finish compliant with RoHS standards. The device is housed in an SOT-323 package, providing a collector current rating of -1.5 A and a power dissipation capacity of 200 mW. Key electrical characteristics include a collector-base voltage of -40 V, a collector-emitter voltage of -25 V, and an emitter-base voltage of -5 V. The DC current gain (hFE) for the L suffix ranges from 120 to 200 at a collector current of -100 mA.

Single Bipolar Transistors Feature Summary

• Utilizes a compact SOT-323 surface-mount package suitable for space-constrained designs.
• Features a halogen-free green epoxy construction meeting UL 94 V-0 flammability ratings.
• Designed for high thermal stability with an operating junction temperature range extending to +150°C.

Single Bipolar Transistors Applications

• General-purpose switching applications
• Low-power amplifier circuits
• Driver stages for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required hFE classification, as the L designation specifies a gain range of 120 to 200. Confirm the component is sourced from authorized MCC distributors to ensure traceability and compliance with quality standards. Check the datasheet for specific handling instructions regarding moisture sensitivity level 1 packaging requirements during storage and assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 200 mW power dissipation limit in an SOT-323 package is required. Ensure the application demands a collector current capability of up to 1.5 A and a breakdown voltage of at least 25 V. Consider the specific hFE binning provided by the L suffix if precise gain control is necessary for the circuit design.

Single Bipolar Transistors Part Context

This part belongs to the MMSS8550W series of PNP transistors produced by Micro Commercial Components. The series includes variants distinguished by their DC current gain classifications: L, H, and J. All members share identical maximum ratings and physical dimensions but differ in their amplification factors, allowing designers to choose based on specific signal processing needs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include MMSS8550W-H-TP and MMSS8550W-J-TP. These alternatives offer different DC current gain ranges while maintaining identical pinouts, maximum ratings, and package types. Verify that the replacement's gain specifications align with the original circuit requirements before implementation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the MMSS8550W-L-TP?

The DC current gain (hFE) for the MMSS8550W-L-TP ranges from 120 to 200 when measured at a collector current of -100 mA and a collector-emitter voltage of -1 V.

Is the MMSS8550W-L-TP compliant with environmental regulations?

Yes, the device is lead-free and RoHS compliant. It also meets the definition of a halogen-free 'Green' product, containing less than 900 ppm each of bromine and chlorine.

What is the maximum power dissipation of this transistor?

The maximum power dissipation (PD) for the MMSS8550W-L-TP is rated at 200 mW.