MMST5551-7-F

Single Bipolar Transistors Overview

The MMST5551-7-F is a single NPN small-signal transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It features epitaxial planar die construction and is designed for low power amplification and switching applications. The device supports a continuous collector current of 200 mA with a collector-emitter breakdown voltage (VCEO) of 160 V and a collector-base breakdown voltage (VCBO) of 180 V. Power dissipation is rated at 200 mW, and the gain-bandwidth product reaches 300 MHz. Operating temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar die construction for high reliability
• Ultra-small SOT-323 surface-mount package
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free green device

Single Bipolar Transistors Applications

• Low power amplification
• Switching circuits
• Automotive applications requiring specific change control

Single Bipolar Transistors Procurement Notes

Verify that the component matches the exact part number MMST5551-7-F and the specified SOT-323 package. Confirm compliance with RoHS 3 and REACH directives as documented in the datasheet. Ensure the supplier provides traceability to Diodes Incorporated manufacturing facilities. Validate that the received units meet the absolute maximum ratings and electrical characteristics outlined in the official specification document.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high voltage capability is required. The 160 V collector-emitter rating distinguishes it from standard low-voltage alternatives. Consider the 200 mA continuous current limit and 200 mW power dissipation for thermal management. The SOT-323 footprint is suitable for space-constrained designs. Verify compatibility with the intended operating temperature range of -55°C to +150°C.

Single Bipolar Transistors Part Context

This component belongs to the MMST5551 series of high-voltage NPN transistors. It serves as the complementary counterpart to the MMST5401 PNP type. The device is qualified to JEDEC standards for high reliability and is suitable for automotive applications meeting AEC-Q100/101/104/200 requirements when ordered with the Q-suffix variant.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the MMST5401 for complementary PNP functionality. For automotive-grade requirements, consider the MMST5551Q-7-F variant which meets AEC-Q101 qualification standards.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MMST5551?

The maximum collector-emitter breakdown voltage (VCEO) is 160 V.

Is the MMST5551-7-F suitable for automotive applications?

Yes, it is ideal for automotive applications requiring specific change control, though the Q-suffix version is specifically qualified to AEC-Q101.

What is the gain-bandwidth product of this transistor?

The current gain-bandwidth product (fT) is 300 MHz.