MPN7420-C12

RF Diode Overview

The MPN7420-C12 is a high-power silicon PIN diode chip featuring a passivated mesa construction and tri-metallization for reliable operation. It offers a breakdown voltage of 400 V at 10 µA reverse current, with a maximum series resistance of 1.5 Ω at 100 mA forward current. The junction capacitance is 0.08 pF at 50 V reverse bias, and minority carrier lifetime is 30 ns. The device has a nominal I-region width of 100 µm, contact diameter of 5 mils, and chip size of 15 mils square. Thermal resistance (Theta) is rated at 60 °C/W.

RF Diode Feature Summary

• Passivated mesa design with tri-metallization for durability under demanding conditions
• High power handling capability suitable for robust switching applications
• Low junction capacitance supporting high-frequency performance

RF Diode Applications

• High-power RF switching circuits
• Attenuator modules
• Pulse modulation systems

RF Diode Procurement Notes

Verify the specific C12 suffix requirements against the datasheet notes regarding die thickness specifications before ordering. Confirm that the intended operating environment remains within the absolute maximum ratings provided in the official documentation to ensure device longevity and prevent permanent damage during deployment.

RF Diode Selection Notes

Select this component when a 400 V breakdown voltage and low 0.08 pF capacitance are required. The 1.5 Ω series resistance and 30 ns carrier lifetime define its switching speed and conduction characteristics. Ensure the thermal management solution can handle the specified Theta rating of 60 °C/W for sustained operation.

RF Diode Part Context

This part belongs to MACOM's High Power Silicon PIN Diodes family, which includes variants like MPN7330 and MPN7380. These devices share common features such as passivated mesa construction and are designed for commercial and industrial RF applications requiring high reliability and power handling capabilities.

RF Diode Replacement Considerations

MPN7453B offers a similar 400 V breakdown but differs in series resistance (0.9 Ω) and capacitance (0.20 pF). MPN7453C provides 300 V breakdown with 0.25 pF capacitance. Verify electrical parameter compatibility before substitution.

RF Diode FAQ

What is the die thickness for the MPN7420-C12?

The datasheet specifies that the C12 suffix indicates a die thickness range of 6 to 9 mils.

What is the maximum junction temperature?

The absolute maximum rating for junction temperature is +175°C.

Is screening available per military standards?

Yes, screening is available per MIL-PRF-19500 / 38534 upon request.