Single Bipolar Transistors MPS6512 TIN/LEAD product image

MPS6512 TIN/LEAD

$0.20
  • Description:TH TRANSISTOR-SMALL SIGNAL (<=1A
  • Series:MPS6512

SKU:e4d58fe10fc4 Category: Brand:

  
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MPS6512 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TH TRANSISTOR-SMALL SIGNAL (. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPS6512 TIN/LEAD

  • Description:TH TRANSISTOR-SMALL SIGNAL (<=1A
  • Series:MPS6512
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 2mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MPS6512 TIN/LEAD

MPS6512 TIN/LEAD

Single Bipolar Transistors Overview

The MPS6512 TIN/LEAD is an NPN silicon planar epitaxial transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 40 V. The device supports a continuous collector current of 100 mA with a maximum power dissipation of 625 mW at 25°C ambient temperature. It utilizes a TO-92 through-hole package and operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon planar epitaxial construction for general-purpose amplifier applications
  • Through-hole TO-92 mounting style suitable for standard PCB layouts
  • Wide operating junction temperature range extending to 150°C

Single Bipolar Transistors Applications

  • General-purpose small signal amplification
  • Low-power switching circuits
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific lead-free or tin/lead variant requirements against the project specifications before ordering. Confirm that the TO-92 package dimensions align with the target board footprint. Ensure the 625 mW power dissipation rating is sufficient for the intended thermal environment without excessive derating.

Single Bipolar Transistors Selection Notes

Select this component when an NPN configuration is required with a 30 V collector-emitter breakdown voltage. The 100 mA current capability makes it suitable for low-power signal processing tasks. Consider the complementary MPS6516 PNP transistor if push-pull configurations are needed within the same series.

Single Bipolar Transistors Part Context

This part belongs to the MPS6512 series of complementary silicon transistors produced by Central Semiconductor. The series includes both NPN (MPS6512-15) and PNP (MPS6516-19) variants designed for general-purpose use. These devices share similar electrical characteristics and packaging, facilitating balanced circuit design.

Single Bipolar Transistors Replacement Considerations

Direct parameter-equivalent substitutes include the MPS6512 from other manufacturers such as New Jersey Semiconductor. Verify pinout compatibility and thermal resistance values when considering alternative sources.

MPS6512 TIN/LEADMPS6512 TIN/LEAD
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