Single Bipolar Transistors MPS6520 TRE TIN/LEAD product image

MPS6520 TRE TIN/LEAD

$0.18
  • Description:25V 100MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:4f019e452d03 Category: Brand:

  
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MPS6520 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 25V 100MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPS6520 TRE TIN/LEAD

  • Description:25V 100MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MPS6520 TRE TIN/LEAD

MPS6520 TRE TIN/LEAD

Single Bipolar Transistors Overview

The MPS6520 TRE TIN/LEAD is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical ratings include a collector-emitter voltage (VCEO) of 25 V, a collector-base voltage (VCBO) of 25 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 600 mA with a total power dissipation of 625 mW at 25°C ambient temperature. Its DC current gain (hFE) ranges from a minimum of 35 to a maximum of 200, measured under specific bias conditions.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for complementary circuit applications
  • High DC current gain capability for signal amplification
  • Robust thermal performance with extended operating temperature limits

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Electronic switching applications
  • Complementary pairs in audio or logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's latest documentation to ensure correct plating and packaging specifications. Confirm RoHS compliance status and lead-free availability requirements prior to procurement. Cross-reference the datasheet revision date to validate all electrical parameters and mechanical dimensions. Ensure the selected variant matches the required tape-and-reel quantity for automated assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP small-signal transistor with moderate voltage ratings and high current gain is required. Compare the hFE spread and saturation voltage against alternative NPN counterparts if designing complementary push-pull stages. Evaluate the thermal resistance and power derating curves to ensure adequate heat dissipation within the TO-92 package constraints for the intended duty cycle.

Single Bipolar Transistors Part Context

This part belongs to the MPS65xx series of general-purpose silicon transistors produced by Central Semiconductor. The series typically includes both NPN and PNP variants designed for low-power switching and amplification tasks. These components are widely used in consumer electronics and industrial control systems where reliable small-signal performance is necessary.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent PNP transistors with matching VCEO, IC, and package dimensions. Verify pinout compatibility and electrical parameter overlaps before replacing the original component in existing designs.

MPS6520 TRE TIN/LEADMPS6520 TRE TIN/LEAD
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