ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
What Is a PTC Thermistor?
Learn why PTC resistance rises with temperature, how it differs from NTC, and which ratings matter for sensing and protection.
Read More
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MSC010SDA120D/S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC SBD 1200 V 10 A DIE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for MSC010SDA120D/S
- Description：SIC SBD 1200 V 10 A DIE
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for MSC010SDA120D/S
Single FETs, MOSFETs Overview
The MSC010SDA120D/S is a silicon carbide Schottky barrier diode manufactured by Microchip Technology. It features a single configuration with a maximum repetitive reverse voltage of 1.2 kV and a forward current rating of 39 A. The device exhibits a typical forward voltage of 1.5 V at rated current and supports a forward surge current of 109 A. Designed for surface mount applications, it utilizes a D2PAK-2 package. The component operates within a temperature range from -55°C to +175°C and has a power dissipation capacity of 167 W.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide semiconductor technology for high thermal conductivity and zero reverse recovery charge.
- Features a surface-mount D2PAK-2 package designed for efficient board space utilization.
- Supports extended operating temperatures up to +175°C for robust performance in demanding environments.
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- Uninterruptible power supply (UPS) systems
- DC-DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with surface-mount assembly processes and validate thermal management requirements for the D2PAK-2 footprint before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low forward voltage drop and high-temperature stability. Compare the 1.2 kV blocking capability and 39 A current rating against circuit demands. Consider the D2PAK-2 package constraints for PCB layout and heat sinking requirements relative to the 167 W power dissipation limit.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's silicon carbide discrete product portfolio, specifically the Schottky barrier diode series. These components are engineered to replace traditional silicon diodes, offering superior efficiency and reduced system size in power conversion architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent SiC Schottky diodes with matching 1.2 kV ratings and D2PAK-2 packaging. Verify that alternative parts meet the same thermal and electrical specifications for seamless integration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
