Memory IC MSR622BJE288-10 product image

MSR622BJE288-10

  • Description:IC SRAM 576MBIT PAR 288FCBGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray

SKU:21ec4b6de299 Category: Brand:

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MSR622BJE288-10 is listed in the Memory IC range at ChipApex. The manufacturer field lists MoSys, Inc.. Its product description is IC SRAM 576MBIT PAR 288FCBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MSR622BJE288-10

  • Description:IC SRAM 576MBIT PAR 288FCBGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM, RLDRAM
  • Memory Size:576Mbit
  • Memory Organization:8M x 72
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:-
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:288-BGA, FCBGA
  • Supplier Device Package:288-FCBGA (19x19)
  • Access Time:3.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MSR622BJE288-10

MSR622BJE288-10

Memory IC Overview

The MSR622BJE288-10 is a volatile RLDRAM memory integrated circuit manufactured by MoSys, Inc. It provides a total storage capacity of 576 Mbit (0.5 GB) organized in a parallel interface architecture. The device utilizes a 288-pin FCBGA package with dimensions of 19x19 mm. It supports data transfer rates up to 320 Gbps through full-duplex operation across eight lanes per port. The component operates with a minimum of four lanes and features two independent ports.

Memory IC Feature Summary

  • Supports high bandwidth operations up to 320 Gbps
  • Features two full-duplex ports with eight-lane capability each
  • Operates with a minimum configuration of four lanes
  • Utilizes parallel interface for data transmission

Memory IC Applications

  • High-performance computing systems requiring large on-chip memory
  • Network infrastructure equipment demanding high bandwidth
  • Data center applications utilizing burst memory architectures

Memory IC Procurement Notes

Verify the specific suffix JE288-10 against official MoSys documentation to confirm pinout and electrical specifications. Ensure compatibility with existing PCB layouts designed for 288-pin FCBGA packages. Cross-reference thermal requirements and voltage levels with system design constraints before procurement.

Memory IC Selection Notes

Select this component when system designs require high-density volatile memory with parallel interface capabilities. Consider the 288-pin FCBGA form factor for space-constrained high-speed applications. Evaluate lane configuration flexibility, as the device supports operation with a minimum of four lanes while offering dual-port functionality.

Memory IC Part Context

This part belongs to the MSR622 series of RLDRAM devices from MoSys. The series is characterized by high-bandwidth memory solutions suitable for demanding computational tasks. The specific model denotes the 576 Mbit capacity variant within the broader family of burst RAM components.

Memory IC Replacement Considerations

Check for compatible variants such as MSR622AJC288-12 which shares similar architectural features but may differ in speed grade or package type. Verify functional equivalence regarding lane configurations and interface protocols before substitution.

MSR622BJE288-10MSR622BJE288-10

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