MSS40-448-B42

RF Diode Overview

The MSS40-448-B42 is a medium barrier silicon Schottky diode from the MSS40 series, configured as a single junction device. It features a typical forward voltage (VF) of 0.40 V at 1 mA and a minimum breakdown voltage (VBR) of 3 V. The junction capacitance (CJ) ranges from 0.12 to 0.15 pF, with a typical series resistance (RS) of 7 Ω and maximum differential resistance (RD) of 17 Ω. The device achieves a typical cutoff frequency (FCO) of 190 GHz. Packaged in the B42 outline, it supports an operating temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Utilizes proprietary processes on N-type epitaxial substrates for high FCO performance.
• Optimized mixer operation with LO power between 0 dBm and +6 dBm per diode.
• Offers matching options for VF, RD, and CJ characteristics.

RF Diode Applications

• Mixer circuits requiring high cutoff frequencies
• RF detection applications
• High-speed switching designs

RF Diode Procurement Notes

Verify the specific package outline code against the datasheet table to ensure compatibility with the intended footprint. Confirm that the ordering suffix corresponds to the required screening level or packaging format. Cross-reference the electrical parameters with the test conditions specified in the official documentation to validate design margins.

RF Diode Selection Notes

Select this component when a single junction configuration with a 190 GHz cutoff frequency is required. Ensure the circuit operates within the 0 dBm to +6 dBm LO power range for optimal mixer performance. Verify that the thermal management allows for linear derating up to +150°C ambient temperature.

RF Diode Part Context

This part belongs to the MSS40-xxx-x Series of medium barrier silicon Schottky diodes. The series includes various configurations such as single junction, tee, ring quad, and crossover ring quad devices. Different outlines like C15, B10B, and E45 are available to suit diverse mounting and integration needs.

RF Diode Replacement Considerations

Direct substitutes within the same series include MSS40-048-C15, MSS40-148-B10B, and MSS40-448-E45. These alternatives share similar electrical characteristics but differ in package outline and specific capacitance values. Verify mechanical fit and pinout compatibility before substitution.

RF Diode FAQ

What is the typical cutoff frequency for the MSS40-448-B42?

The typical cutoff frequency is 190 GHz.

What is the recommended LO power for mixer applications?

Optimum mixer performance is obtained with an LO power of 0 dBm to +6 dBm per diode.

What is the minimum breakdown voltage rating?

The minimum breakdown voltage (VBR) is 3 V.