MSS60-448-E45R

RF Diode Overview

The MSS60-448-E45R is a packaged Ring Quad Extra High Barrier Silicon Schottky Diode from the MSS60 series. It features a typical forward voltage of 650 mV and a minimum breakdown voltage of 3.5 V. The device exhibits a typical junction capacitance of 0.32 pF with a maximum of 0.38 pF at 1 MHz. Typical series resistance is 13 Ω, while maximum differential resistance is 18 Ω. It supports a rated reverse voltage of VBR, a forward current of 50 mA, and power dissipation of 100 mW per junction. Operating and storage temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Utilizes proprietary processes on N-Type epitaxial substrates to achieve high figure of merit (FCO) values for mixer performance.
• Provides closely matched junctions within the Ring Quad configuration for balanced operation.
• Offers selectable barrier height options to optimize detector sensitivity and noise characteristics.
• Supports high-reliability screening in accordance with MIL-PRF-19500 and MIL-PRF-38534 standards.

RF Diode Applications

• High-performance RF and microwave mixer circuits
• Detector applications requiring low noise and high sensitivity
• Wireless infrastructure and test instrument signal processing

RF Diode Procurement Notes

Verify the specific suffix 'E45' against the official datasheet to confirm the packaged Ring Quad configuration and electrical tolerances. Ensure the 'R' designation aligns with the required reel packaging format if applicable. Confirm that the operating temperature range and soldering limits meet the target system requirements before finalizing orders.

RF Diode Selection Notes

Select this component when a packaged Ring Quad silicon Schottky diode with extra high barrier properties is required. The E45 outline provides specific capacitance and resistance values suitable for optimized mixer performance with LO power between 6 dBm and 12 dBm per diode. Consider beam lead alternatives if board space is extremely constrained.

RF Diode Part Context

This part belongs to the MSS60-xxx-x Series of Extra High Barrier Silicon Schottky Diodes manufactured by MACOM Technology Solutions. The series includes various configurations such as Single Junction, Series Tee, and Ring Quad, available in both beam lead and packaged formats to support diverse RF design needs.

RF Diode Replacement Considerations

Other models in the MSS60-4xx-E45 family, such as MSS60-444-E45 or MSS60-453-E45, offer different capacitance and resistance profiles. Verify that the specific electrical parameters of the substitute match the circuit requirements for impedance matching and conversion loss.

RF Diode FAQ

What is the recommended local oscillator (LO) power for optimal mixer performance?

Optimum mixer performance is obtained with an LO power of 6 dBm to 12 dBm per diode.

Is high-reliability screening available for this component?

Yes, Hi-Rel screening is available per MIL-PRF-19500 and MIL-PRF-38534 standards.

What are the absolute maximum ratings for power dissipation?

The power dissipation is rated at 100 mW per junction at TA = 25°C, derating linearly to 0 at TA = +150°C.