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MSTC160-16 is listed in the SCRs - Modules range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is POWER MOD THYRISTOR/DIODE T2. Review the specifications below when checking this part for your BOM.
The MSTC160-16 is a thyristor/diode module from the MSTC160 series, rated for a maximum repetitive peak reverse voltage of 1600V and an average on-state current of 160A at 85°C. It features a glass-passivated chip and utilizes heat transfer through an aluminum oxide DCB ceramic isolated metal baseplate. The module supports a surge current of 5000A at 125°C junction temperature and offers high di/dt capability of 200 A/us.
Verify the specific voltage rating suffix to ensure it matches the required 1600V application, as the MSTC160 series includes variants with different voltage ratings. Confirm thermal management requirements align with the specified junction temperature limits and thermal resistance values provided in the datasheet before finalizing procurement.
Select this module when applications require a robust thyristor solution with high surge tolerance and standardized mounting dimensions. Consider the 160A continuous current rating and 1600V blocking voltage against system demands. Ensure gate drive circuits can supply the necessary trigger current and voltage specifications outlined in the electrical characteristics table.
The MSTC160-16 belongs to the MSTC160 family of thyristor/diode modules manufactured by Microsemi Corporation. This series is designed for industrial power electronics, offering reliable performance in high-current applications. The module integrates both thyristor and diode functions within a single compact package to simplify circuit design.
Direct replacements must match the 160A current rating and 1600V voltage specification. Verify that alternative modules share the same T2 case outline and mounting hole patterns to ensure mechanical compatibility without requiring chassis modifications.
The maximum non-repetitive forward surge current is 5000A at a junction temperature of 125°C for a 10ms sine wave pulse.
It uses an aluminum oxide DCB ceramic isolated metal baseplate to facilitate efficient heat transfer from the chips to the heatsink.
The typical gate trigger current is 150mA when measured at a junction temperature of 25°C with a device voltage of 6V.
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