Memory IC MT29F256G08CMCABH2-10RZ:A product image

MT29F256G08CMCABH2-10RZ:A

  • Description:IC FLASH 256GBIT PAR 100TBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:d4b61ca35794 Category: Brand:

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MT29F256G08CMCABH2-10RZ:A is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 256GBIT PAR 100TBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT29F256G08CMCABH2-10RZ:A

  • Description:IC FLASH 256GBIT PAR 100TBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND (MLC)
  • Memory Size:256Gbit
  • Memory Organization:32G x 8
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-TBGA
  • Supplier Device Package:100-TBGA (12x18)

Memory IC datasheet and documents for MT29F256G08CMCABH2-10RZ:A

MT29F256G08CMCABH2-10RZ:A

Memory IC Overview

The Micron MT29F256G08CMCABH2-10RZ:A is a 256 Gbit NAND flash memory IC utilizing Multi-Level Cell (MLC) technology. It features an 8-bit data bus width and operates at a maximum clock frequency of 100 MHz. The device provides a storage capacity organized as 32 G x 8 bits. It supports a supply voltage range of 2.7 V to 3.6 V and functions within an operating temperature range of 0°C to +70°C. The component is housed in a 100-TBGA package measuring 12x18 mm.

Memory IC Feature Summary

  • Utilizes MLC NAND technology for high-density non-volatile data storage
  • Supports parallel interface with 8-bit data bus width
  • Operates within standard industrial voltage and temperature ranges

Memory IC Applications

  • Embedded systems requiring non-volatile memory
  • General-purpose data storage solutions
  • Consumer electronics devices

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates Tape & Reel packaging when ordering. Confirm the MLC variant matches system requirements, as SLC alternatives exist in the same family. Ensure the 100-TBGA footprint aligns with PCB design constraints. Check RoHS3 compliance status if required by regional regulations. Validate the 0°C to +70°C commercial temperature grade against environmental specifications.

Memory IC Selection Notes

Select this part for applications requiring 256 Gbit density with MLC cost-efficiency. Compare against SLC variants like the MT29F256G08AUCABH3 series if higher endurance or wider temperature ranges are needed. Consider the 100-TBGA package size for board space limitations. Verify that the 100 MHz speed meets system timing requirements. Ensure the 2.7V–3.6V voltage range matches the host controller's I/O levels.

Memory IC Part Context

This component belongs to Micron's 256Gb NAND flash portfolio, which includes both SLC and MLC options. The MLC version offers higher density per die compared to older generations. It shares the MT29F256G08 base product number with other packages and speeds. The TBGA package is common for compact embedded designs. This model represents a commercial-grade solution for mass-market electronics.

Memory IC FAQ

What type of NAND cell technology does this part use?

It uses Multi-Level Cell (MLC) NAND technology.

What is the package type and pin count?

It is housed in a 100-TBGA package with dimensions of 12x18 mm.

MT29F256G08CMCABH2-10RZ:AMT29F256G08CMCABH2-10RZ:A

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