MT29F512G08EBLGEB27C3WC1-F

Memory IC Overview

The MT29F512G08EBLGEB27C3WC1-F is a NAND flash memory die manufactured by Micron Technology. It offers a storage capacity of 512 Gbit organized as 64 G x 8 bits with an 8-bit data bus width. The component operates within a voltage range of 2.6 V to 3.6 V and supports temperatures from 0°C to +70°C. It utilizes TLC technology and is supplied in bulk packaging.

Memory IC Feature Summary

• High-density 512 Gbit NAND flash storage architecture
• TLC cell technology for increased storage density
• Exposed die format for flexible integration

Memory IC Applications

• Mobile devices requiring high-capacity storage
• Consumer electronics with space-constrained designs
• Industrial embedded systems needing robust non-volatile memory

Memory IC Procurement Notes

Verify the specific suffix 'F' against official Micron documentation to confirm package type and availability status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Ensure handling procedures account for the exposed die nature of the component.

Memory IC Selection Notes

Select this part for applications requiring high-density, small-footprint NAND flash. Consider the 8-bit interface and voltage requirements during system design. Evaluate thermal management needs given the commercial temperature range limits.

Memory IC Part Context

This component belongs to Micron's NAND flash portfolio, designed for high-density data storage. It represents a move towards smaller form factors while maintaining large capacities through advanced manufacturing processes and TLC technology.

Memory IC Replacement Considerations

Check for direct substitutes within the same series or generation. Verify pin compatibility and electrical specifications before considering alternative parts.