MT47H512M4THN-3:H

Memory IC Overview

The MT47H512M4THN-3:H is a 2Gb TwinDie DDR2 SDRAM configured as two ranks of 32 Meg x 4 with 8 internal banks each. It operates at +1.8V ±0.1V for VDD and VDDQ, utilizing a JEDEC-standard 63-ball FBGA package measuring 8mm x 10mm with a maximum thickness of 1.2mm. The -3 speed grade supports a cycle time of 3.0ns at CL=5 (DDR2-667). Key timing parameters include tRCD of 15ns, tRP of 15ns, tRC of 55ns, and tRFC of 127.5ns.

Memory IC Feature Summary

• TwinDie architecture integrating two independent 1Gb DDR2 monolithic dies within a single package to achieve 2Gb density.
• Dual-rank configuration featuring separate chip select (CS#), on-die termination (ODT), and clock enable (CKE) control signals for each rank.
• Low-profile physical design with a maximum package thickness of 1.2mm, suitable for space-constrained applications.

Memory IC Applications

• High-density memory systems requiring dual-rank organization
• Embedded computing platforms with strict height limitations
• Industrial equipment operating within extended temperature ranges

Memory IC Procurement Notes

Verify the specific ordering suffixes against official Micron documentation to confirm package type, speed grade, and temperature range. Ensure the procurement specification matches the required TwinDie functionality and 63-ball FBGA footprint. Confirm RoHS compliance status and lead-free solder ball material requirements prior to finalizing orders.

Memory IC Selection Notes

Select this component when a 2Gb capacity is required in a low-profile form factor without increasing board area. The dual-rank structure allows independent management of each die via dedicated CS#, ODT, and CKE balls. Verify that the system controller supports the specific 63-ball FBGA pinout and addresses the unique initialization requirements for TwinDie devices.

Memory IC Part Context

This part belongs to Micron's 2Gb TwinDie DDR2 SDRAM family, which combines two 1Gb dies into one package. It shares functional similarities with standard 1Gb DDR2 parts but requires specific handling for its dual-rank architecture. The THN suffix denotes the 63-ball FBGA package, while the -3 indicates the DDR2-667 speed grade.

Memory IC Replacement Considerations

Direct replacements must match the 2Gb TwinDie architecture, 63-ball FBGA package, and -3 speed grade. Verify compatibility with the specific dual-rank control signals (CS#, ODT, CKE) and ensure the substitute supports the same 1.8V I/O voltage levels and timing constraints.