Memory IC MT53E256M32D1KS-046 WT:L product image

MT53E256M32D1KS-046 WT:L

$9.11
  • Description:IC DRAM 8GBIT PAR 200VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:04b4c575e16c Category: Brand:

  
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MT53E256M32D1KS-046 WT:L is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 8GBIT PAR 200VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT53E256M32D1KS-046 WT:L

  • Description:IC DRAM 8GBIT PAR 200VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR4
  • Memory Size:8Gbit
  • Memory Organization:256M x 32
  • Memory Interface:Parallel
  • Clock Frequency:2.133 GHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.06V ~ 1.17V
  • Operating Temperature:-30°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:200-VFBGA
  • Supplier Device Package:200-VFBGA (10x14.5)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT53E256M32D1KS-046 WT:L

MT53E256M32D1KS-046 WT:L

Memory IC Overview

The MT53E256M32D1KS-046 WT:L is a mobile LPDDR4 SDRAM device with an 8 Gbit capacity, organized as 256M x 32. It operates at a maximum clock frequency of 2.133 GHz and utilizes a VFBGA package with 200 pins. The component supports a data rate range of 4266–20 Mb/s per pin and functions within a voltage range of 1.06 V to 1.95 V. It features a 16n prefetch DDR architecture with eight internal banks per channel for concurrent operation. The device includes programmable read/write latencies and burst lengths, along with on-chip temperature sensing for self-refresh control.

Memory IC Feature Summary

  • Supports low-power DDR4 protocol with double-data-rate transfers on the DQ bus
  • Features bidirectional differential data strobes per byte lane for high-speed signaling
  • Includes on-chip temperature sensor to regulate self-refresh rates dynamically
  • Enables partial-array self-refresh and directed per-bank refresh for power optimization

Memory IC Applications

  • Mobile smartphones and tablets requiring high-density memory
  • Wearable devices with strict power consumption constraints
  • Automotive infotainment systems operating in extended temperature ranges
  • IoT gateways and edge computing modules

Memory IC Procurement Notes

Verify the specific suffix 'WT:L' against official Micron documentation to confirm temperature grade and speed bin alignment. Confirm current production status as availability may vary by region. Ensure compatibility with host controller LPDDR4 PHY settings before integration. Request latest datasheet revision to validate electrical characteristics and mechanical dimensions.

Memory IC Selection Notes

Select this component when an 8 Gbit density with a 32-bit interface width is required for mobile applications. The 200-pin VFBGA package suits space-constrained designs. Verify that the host system supports the 2.133 GHz maximum frequency and compatible voltage levels. Consider thermal management requirements given the operational temperature range and self-refresh capabilities.

Memory IC Part Context

This part belongs to the Micron MT53E series of mobile LPDDR4 SDRAMs. It shares architectural similarities with other variants in the family but differs in capacity, organization, and packaging. The MT53E series is designed to balance performance, power efficiency, and physical footprint for next-generation mobile and embedded platforms.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Micron's official substitution guide or contact manufacturer support for verified alternatives.

MT53E256M32D1KS-046 WT:LMT53E256M32D1KS-046 WT:L
$9.11
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