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NCV8402ADDR2G
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Product Detailed Parameters
- Description：IC PWR DRIVER N-CHAN 1:1 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：2
- Ratio - Input:Output：1:01
- Output Configuration：Low Side
- Output Type：N-Channel
- Interface：On/Off
- Voltage - Load：42V (Max)
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：2A
- Rds On (Typ)：165mOhm
- Input Type：Non-Inverting
- Features：Auto Restart
- Fault Protection：Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The NCV8402ADDR2G is a dual N-channel enhancement mode MOSFET manufactured by onsemi, designed for automotive applications. It features a drain-source breakdown voltage of 55 V and a continuous drain current of 2 A. The device has a maximum gate-source voltage rating of ±14 V and a threshold voltage of 1.3 V. With a low on-resistance of 165 mΩ and power dissipation of 800 mW, it operates within a temperature range of -55°C to +150°C. Packaged in an 8-pin SOIC surface-mount format, it meets AEC-Q100 standards.
Feature Summary
- Dual N-channel configuration for efficient switching control
- Automotive-grade reliability certified under AEC-Q100 standards
- Extended operating temperature range suitable for harsh environments
Applications
- Low-side self-protected load switching
- High-side switch applications
- General-purpose power switching in automotive systems
Procurement Notes
Verify the specific suffix 'R2G' against official datasheets to confirm package type and tape/reel specifications. Ensure procurement channels provide valid RoHS compliance documentation. Confirm that the component meets the required AEC-Q100 qualification levels for your specific application environment before finalizing orders.
Selection Notes
Select this component when a dual N-channel MOSFET with high voltage tolerance and automotive certification is required. Consider its 165 mΩ on-resistance for efficiency needs and the 800 mW power dissipation limit for thermal management. Verify compatibility with logic-level gate drive voltages if interfacing directly with microcontrollers.
Part Context
This part belongs to the NCV8402AD series of automotive MOSFETs. It is specifically engineered for robust performance in vehicle electronics, offering a compact SOIC-8 footprint. The series supports various power management functions where reliable switching and durability are critical for system integrity.
Replacement Considerations
Direct substitutes include other NCV8402 variants with compatible pinouts and electrical ratings. Verify that any replacement maintains the same AEC-Q100 qualification and package dimensions to ensure board compatibility without redesign.
