NDS331N_D87Z

Single FETs, MOSFETs Overview

The NDS331N_D87Z is an N-channel logic level enhancement mode power field effect transistor manufactured by onsemi. It utilizes a proprietary high cell density DMOS technology to minimize on-state resistance, making it suitable for low voltage applications requiring fast switching and low in-line power loss within small outline surface mount packages. The device features a maximum drain-source voltage of 20 V and a continuous drain current of 1.3 A. Key electrical parameters include a static drain-source on-resistance of 0.21 Ω at VGS = 2.7 V and 0.16 Ω at VGS = 4.5 V. The gate threshold voltage ranges from 0.5 V to 1 V. It is housed in a SOT-23/SUPERSOT-23 package with three leads.

Single FETs, MOSFETs Feature Summary

• High density cell design utilizing proprietary DMOS technology to achieve extremely low on-resistance.
• Industry standard SOT-23 surface mount package using SUPERSOT-3 design for superior thermal and electrical capabilities.
• Logic level enhancement mode operation optimized for low voltage applications.
• Pb-free device construction.

Single FETs, MOSFETs Applications

• Notebook computers
• Portable phones
• PCMCIA cards
• Battery powered circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix _D87Z against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS directives as the device is designated Pb-Free. Confirm that the application environment remains within the specified operating temperature range of -55°C to +150°C to maintain reliability. Check for any recent product change notifications regarding the component.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance in a compact surface mount footprint. The logic level gate drive capability allows for direct interfacing with low voltage control signals. Consider the thermal resistance characteristics and board layout requirements for optimal heat dissipation. Evaluate the switching speed and capacitance parameters against the specific frequency requirements of the target circuit.

Single FETs, MOSFETs Part Context

The NDS331N belongs to the family of N-channel logic level enhancement mode field effect transistors produced by onsemi. These devices are engineered for efficiency in portable electronics where space and power consumption are critical constraints. The SUPERSOT-3 package provides a balance between electrical performance and physical size, facilitating integration into densely populated printed circuit boards.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides or datasheets for compatible alternatives. Verify pinout compatibility, voltage ratings, and current capabilities when considering replacements. Ensure that any substitute component meets the same thermal and electrical performance standards required by the original design.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the NDS331N?

The maximum continuous drain current (ID) is 1.3 A.

What is the gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from 0.5 V to 1 V under standard test conditions.

Is the device lead-free?

Yes, the NDS331N is a Pb-Free device.