NDS356P

Description：MOSFET P-CH 20V 1.1A SUPERSOT3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:198450bb2baf Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NDS356P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 20V 1.1A SUPERSOT3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NDS356P

Description：MOSFET P-CH 20V 1.1A SUPERSOT3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：210mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5 nC @ 5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for NDS356P

NDS356P

Single FETs, MOSFETs Overview

The NDS356P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a maximum drain-source voltage of -20 V and a continuous drain current of ±1.1 A. The device utilizes high cell density DMOS technology to achieve an extremely low static drain-source on-resistance (RDS(ON)) of 0.3 Ω at VGS = -4.5 V and 0.21 Ω at VGS = -10 V. Packaged in a compact SOT-23 surface mount outline, it supports an operating temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Logic level enhancement mode operation enables direct drive from standard logic interfaces for efficient switching.
High-density DMOS cell design minimizes on-state resistance to reduce inline power loss.
Proprietary package construction incorporates a copper lead frame to enhance thermal dissipation capabilities.

Single FETs, MOSFETs Applications

Notebook computer power management
Portable electronics circuits
Battery powered applications requiring fast high-side switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi due to corporate integration history. Confirm the specific revision status against the datasheet Rev. E1 documentation. Ensure the component matches the SOT-23 physical footprint and pinout configuration required for the target PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when low voltage logic control is required for high-side switching applications. The logic level threshold allows compatibility with standard gate drive voltages while maintaining low conduction losses. Evaluate the thermal resistance requirements based on the specific board copper pad area available for heat dissipation.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of power field effect transistors. It represents a generation of components optimized for small outline surface mount packages where space constraints and thermal efficiency are critical design factors for portable electronic systems.