NDT3055L

Single FETs, MOSFETs Overview

The UMW NDT3055L is a logic level N-Channel enhancement mode power MOSFET housed in a SOT-223 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 4 A. The device utilizes high-density cell design to achieve low on-state resistance, specified as 100 mΩ at VGS = 10 V and 50 mΩ at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage under 2 V, total gate charge of 20 nC, and maximum power dissipation of 3 W. The component operates within a temperature range of -65°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Logic level operation allowing direct drive from standard logic circuits with low gate threshold requirements.
• High-density cell architecture engineered for minimized on-state resistance and superior switching performance.
• Robust construction designed to withstand high energy pulses during avalanche and commutation modes.

Single FETs, MOSFETs Applications

• DC motor control systems
• DC/DC converter circuits
• Low voltage power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation matches UTD Semiconductor Co., Limited (UMW) rather than other vendors using identical part numbers. Confirm the package type is SOT-223 and check for specific ordering suffixes like J23Z if cropped center drain leads are required. Ensure datasheet revisions align with the requested specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring efficient low-voltage switching with minimal inline power loss. The logic-level gate drive capability simplifies interface design with microcontrollers or standard logic families. Evaluate thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet for your specific PCB copper pad configuration.

Single FETs, MOSFETs Part Context

This component belongs to the category of N-Channel Enhancement Mode Field Effect Transistors. It is manufactured by UMW (UTD Semiconductor). The device is specifically optimized for power management tasks where fast switching speeds and low conduction losses are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with Fairchild/ON Semiconductor NDT3055L for pin-compatible alternatives. Verify that substitute devices maintain equivalent RDS(ON) characteristics and thermal resistance profiles to ensure circuit performance consistency.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the NDT3055L?

The maximum continuous drain current is 4 A when mounted on a 1 in² pad of 2oz Cu.

Does the NDT3055L support direct logic driver connection?

Yes, it features low drive requirements with a gate threshold voltage less than 2 V, allowing operation directly from logic drivers.