NDT455N

$2.30

Description：MOSFET N-CH 30V 11.5A SOT223-4
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3eb3166e9128 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NDT455N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 11.5A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NDT455N

Description：MOSFET N-CH 30V 11.5A SOT223-4
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：1220 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for NDT455N

NDT455N

Single FETs, MOSFETs Overview

The NDT455N is an N-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi (originally Fairchild Semiconductor). It features a Drain-Source Voltage (VDSS) of 30 V and a continuous Drain Current (ID) of ±11.5 A at 25°C. The device exhibits a maximum static Drain-Source On-Resistance (RDS(ON)) of 0.015 Ω at VGS = 10 V and 0.02 Ω at VGS = 4.5 V. Packaged in a surface-mount SOT-223 format with four pins, it supports a maximum power dissipation of 3 W under specific thermal conditions. The component operates within a temperature range of -65°C to 150°C.

Single FETs, MOSFETs Feature Summary

High density cell design for extremely low RDS(ON)
Logic level drive capability
Suitable for fast switching applications

Single FETs, MOSFETs Applications

DC motor control
DC/DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor production prior to the onsemi acquisition. Confirm the package type matches the required SOT-223 footprint and pin configuration. Ensure the application voltage does not exceed the 30 V rating and that thermal management meets the specified junction-to-ambient resistance requirements for the target PCB copper area.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high current handling and fast switching speeds. The logic level gate threshold allows direct drive from standard logic outputs. Consider the thermal constraints carefully, as power dissipation capabilities are highly dependent on the copper mounting pad area and ambient airflow conditions.

Single FETs, MOSFETs Part Context

This part belongs to the NDT series of N-Channel enhancement mode power field effect transistors. These devices utilize proprietary high cell density DMOS technology tailored to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.