NJL21194DG

$2.33

Description：TRANS NPN 250V 16A TO-264
Series：-

SKU:97b93c5673e3 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NJL21194DG is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 250V 16A TO-264. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJL21194DG

Description：TRANS NPN 250V 16A TO-264
Series：-
Mfr：onsemi
Package：Tube,Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：16 A
Voltage - Collector Emitter Breakdown (Max)：250 V
Vce Saturation (Max) @ Ib, Ic：4V @ 3.2A, 16A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 8A, 5V
Power - Max：200 W
Frequency - Transition：4MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-5
Supplier Device Package：TO-264
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for NJL21194DG

NJL21194DG

Single Bipolar Transistors Overview

The NJL21194DG is a single PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 250 V and a maximum continuous collector current of 16 A. The device has a transition frequency of 4 MHz and a maximum power dissipation of 200 W. It is housed in a TO-3P-3L surface-mount package with a leadless design. The component operates within a junction temperature range of -65°C to 150°C. DC current gain is specified at 20 when tested at 8 A and 5 V.

Single Bipolar Transistors Feature Summary

High-voltage capability with 250 V collector-emitter breakdown for robust operation in demanding circuits.
High-current handling capacity supporting up to 16 A continuous collector current.
Surface-mount TO-3P-3L package designed for efficient thermal management and board space optimization.

Single Bipolar Transistors Applications

High-power linear amplifier stages
Voltage regulator output transistors
Industrial motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the NJL prefix may indicate production by New Japan Radio (NJR) under license or partnership. Confirm RoHS compliance status and ensure the TO-3P-3L pinout matches the target schematic before integration. Request official datasheets to validate electrical parameters against application requirements.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage and current in a compact surface-mount form factor. Ensure the thermal design can handle the 200 W power dissipation rating. Compare the 4 MHz transition frequency against signal speed requirements. Verify that the TO-3P-3L footprint aligns with existing PCB layouts.

Single Bipolar Transistors Part Context

This part belongs to the NJW2119 series of high-power PNP transistors. The series is designed for audio and power amplification applications. The NJL21194DG variant specifically utilizes the leadless TO-3P-3L package, offering improved thermal performance compared to traditional through-hole options while maintaining high voltage and current ratings.