NJL6193R-3-TE1

Overview

The NJL6193R-3-TE1 is a photodiode manufactured by Nisshinbo Micro Devices Inc. It operates within a temperature range of -30°C to +85°C and utilizes an SMD/SMT COBP-2 package. Key electrical specifications include a peak wavelength of 850 nm, a reverse voltage (Vr) of 2.5 V, and a dark current of 100 pA. The device features rise and fall times of 10 ns each, with a maximum forward current (If) of 1 mA.

Feature Summary

• High-speed optical detection capability with 10 ns response times
• Low dark current for improved signal-to-noise ratio
• Surface-mount design compatible with automated assembly

Applications

• Optical communication systems
• Position sensing applications
• Industrial automation sensors

Procurement Notes

Verify the specific suffix TE1 against the manufacturer's datasheet to confirm packaging details such as reel or cut tape configuration. Ensure the COBP-2 footprint matches the target PCB layout. Confirm RoHS compliance status through official documentation before finalizing procurement orders.

Selection Notes

Select this component when a fast response time of 10 ns is required alongside low dark current characteristics. The 850 nm peak wavelength suits standard infrared applications. Verify that the 2.5 V reverse voltage rating meets the circuit requirements and that the operating temperature range covers the intended environment.

Part Context

This part belongs to the NJL6193 series of photodiodes from Nisshinbo Micro Devices. The series focuses on optical detection solutions utilizing silicon photodiode technology. These components are designed for integration into compact electronic systems requiring reliable light sensing capabilities.

Replacement Considerations

Consult the official datasheet for direct pin-compatible substitutes within the same series. Cross-reference specifications such as peak wavelength and response time when evaluating alternative manufacturers' offerings.