Single Bipolar Transistors NJVMJD44H11G product image

NJVMJD44H11G

$1.27
  • Description:TRANS NPN 80V 8A DPAK
  • Series:-

SKU:4dad1e05bc45 Category: Brand:

  
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NJVMJD44H11G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 8A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVMJD44H11G

  • Description:TRANS NPN 80V 8A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
  • Power - Max:1.75 W
  • Frequency - Transition:85MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for NJVMJD44H11G

NJVMJD44H11G

Single Bipolar Transistors Overview

The NJVMJD44H11G is an NPN silicon power transistor in a DPAK (TO-252) surface-mount package. It supports a continuous collector current of 8 A and a collector-emitter voltage of 80 V, with a total power dissipation of 20 W at 25°C case temperature. The device features a minimum DC current gain of 60 at 2 A and a transition frequency of 85 MHz. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NJV prefix indicates automotive qualification under AEC-Q101 standards with PPAP capability.
  • Designed for general-purpose power switching applications such as output driver stages.
  • Features low collector-emitter saturation voltage for improved efficiency.
  • Complementary pairing available with the MJD45H11 PNP transistor.

Single Bipolar Transistors Applications

  • Switching regulators
  • Power converters
  • Power amplifier output or driver stages

Single Bipolar Transistors Procurement Notes

Verify that the specific order includes the NJV prefix to ensure compliance with automotive site control requirements. Confirm the package type matches the required surface-mount footprint. Check for RoHS and halogen-free status if environmental regulations apply. Ensure thermal management design accounts for the specified junction-to-case resistance values during operation.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount NPN power transistor with automotive reliability is required. Compare against through-hole alternatives like the D44H11G if board space allows. Consider the complementary MJD45H11 for push-pull configurations. Verify that the 8 A current rating meets the peak load requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the MJD44H11 series of complementary power transistors manufactured by onsemi. The series is designed to replace older technologies while offering modern surface-mount packaging options. The NJV variant specifically targets automotive and high-reliability industrial markets requiring unique manufacturing site controls.

Single Bipolar Transistors Replacement Considerations

MJD44H11G

Single Bipolar Transistors FAQ

What does the NJV prefix signify?

The NJV prefix indicates that the device is qualified under AEC-Q101 standards and is capable of PPAP submission, targeting automotive and specialized applications requiring unique site controls.

Is this device lead-free?

Yes, the G suffix indicates a Pb-Free package, and the device is also Halogen Free/BFR Free and RoHS compliant.

What is the maximum collector current?

The maximum continuous collector current is 8 A, with a peak current rating of 16 A.

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