NSF080120L3A0Q

$11.12

Description：SICFET N-CH 1200V 35A TO247-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tube

SKU:904e2650dab8 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

NSF080120L3A0Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is SICFET N-CH 1200V 35A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NSF080120L3A0Q

Description：SICFET N-CH 1200V 35A TO247-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
Rds On (Max) @ Id, Vgs：120mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：2.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 15 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1335 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：183W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3L
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for NSF080120L3A0Q

NSF080120L3A0Q

Single FETs, MOSFETs Overview

The NSF080120L3A0 is a Silicon Carbide (SiC) based N-channel power MOSFET rated for 1200 V drain-source voltage and 80 mΩ on-state resistance at 25 °C. It utilizes a TO-247-3L plastic package designed for through-hole PCB mounting with heatsink attachment. The device supports a continuous drain current of 35 A at 25 °C case temperature, reducing to 25 A at 100 °C. Peak pulsed drain current reaches 80 A. Operating junction temperature spans from -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Excellent RDSon temperature stability across the operating range
Very low switching losses with fast reverse recovery characteristics
Temperature independent turn-off switching losses
Fast and robust intrinsic body diode

Single FETs, MOSFETs Applications

E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment does not exceed the absolute maximum ratings defined in the datasheet. Ensure thermal management design accounts for the specified thermal resistance values. Check for any recent product change notices regarding marking codes or specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-power industrial applications requiring high voltage handling and efficient thermal performance. Consider the TO-247-3L package constraints for through-hole assembly and heatsinking requirements. Evaluate gate drive compatibility with the recommended voltage levels to ensure optimal switching behavior and prevent device stress during operation.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's initial lineup of Silicon Carbide MOSFETs, developed in collaboration with Mitsubishi Electric. It represents an entry into the wide bandgap semiconductor market, aiming to provide improved safety and reliability standards compared to traditional silicon devices in demanding power conversion scenarios.