NTBL075N065SC1

Single FETs, MOSFETs Overview

The onsemi NTBL075N065SC1 is a Silicon Carbide (SiC) MOSFET from the EliteSiC series, housed in an H-PSOF8L surface-mount package. It features a 650 V drain-to-source voltage rating and a maximum continuous drain current of 37 A at 25°C case temperature. The device exhibits a typical on-resistance of 56 mΩ at VGS = 18 V and 75 mΩ at VGS = 15 V. Key electrical characteristics include a total gate charge of 59 nC, low effective output capacitance of 109 pF, and a single-pulse avalanche energy capability of 83 mJ. Operating junction temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate charge and low effective output capacitance for reduced switching losses
• High thermal stability with a maximum operating junction temperature of 175°C
• Robust reliability verified through 100% avalanche testing

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptable Power Supplies (UPS)
• Energy Storage Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and shipping configuration before procurement. This component is supplied in tape and reel packaging containing 2000 units per reel. Confirm that the selected variant matches the required H-PSOF8L package dimensions and pinout specifications for your PCB layout design.

Single FETs, MOSFETs Selection Notes

Select this component when high-frequency operation and low conduction losses are critical. The low gate charge facilitates easier driver design compared to higher-charge alternatives. Ensure the application circuit can accommodate the recommended gate voltage range of -5 V to +18 V for optimal performance and safe operation within the specified thermal limits.

Single FETs, MOSFETs Part Context

This part belongs to the EliteSiC family of silicon carbide power devices manufactured by onsemi. It utilizes advanced SiC technology to achieve superior efficiency over traditional silicon MOSFETs. The H-PSOF8L package provides a compact footprint suitable for dense surface-mount designs while maintaining adequate thermal dissipation capabilities for power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 650V rating, H-PSOF8L package, and similar RDS(on) values. Verify pin compatibility and thermal resistance parameters. Cross-reference with other EliteSiC parts or equivalent SiC MOSFETs from different manufacturers ensuring identical electrical characteristics and package outline.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy for this device?

The device supports a single-pulse drain-to-source avalanche energy of 83 mJ under specified test conditions.

Does this MOSFET undergo production testing for avalanche capability?

Yes, the datasheet specifies that the device is 100% avalanche tested to ensure reliability under transient overvoltage conditions.