NTC040N120SC1

Single FETs, MOSFETs Overview

The NTC040N120SC1 is a Silicon Carbide (SiC) MOSFET bare die manufactured by onsemi. It features an N-Channel enhancement mode configuration with a 1200 V drain-source voltage rating and a maximum continuous drain current of 60 A at case temperature. The device exhibits a low on-resistance of 40 mΩ, enabling efficient power handling with a rated power dissipation of 348 W. Designed for high-frequency applications, it offers superior switching performance compared to traditional silicon technologies.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide technology for enhanced reliability and thermal stability
• Provides fast switching characteristics suitable for high-efficiency power conversion
• Features a low on-resistance design to minimize conduction losses

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific revision code and lot traceability upon receipt. Confirm that the receiving facility has appropriate ESD protection protocols, as bare dies are sensitive to electrostatic discharge. Ensure mounting surfaces meet the specified flatness and cleanliness requirements to guarantee optimal thermal contact and electrical performance during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a compact, high-performance SiC solution is required for space-constrained designs. Consider the 60 A current rating and 40 mΩ resistance for efficiency targets. Evaluate the thermal management capabilities of the target substrate, as the 348 W dissipation rating depends on effective heat sinking. Compare against through-hole packages if board space allows for easier integration.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC family of silicon carbide MOSFETs. It represents a bare die format, distinct from packaged components like the TO-247-4L variants in the same series. This form factor allows system integrators to customize packaging and thermal interfaces for specific high-power density applications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include other onsemi SiC bare dies with similar voltage and current ratings, such as the NTC040N120M3S. Verify pinout compatibility and thermal pad specifications before substitution. Cross-referencing with packaged equivalents requires careful evaluation of parasitic inductance differences.