NTD4810N-1G

$0.21

Description：MOSFET N-CH 30V 9A/54A IPAK
Series：-
Mfr：onsemi
Package：Tube

SKU:becb563b5b99 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NTD4810N-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9A/54A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD4810N-1G

Description：MOSFET N-CH 30V 9A/54A IPAK
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 11.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for NTD4810N-1G

NTD4810N-1G

Single FETs, MOSFETs Overview

The NTD4810N-1G is a single N-channel power MOSFET manufactured by onsemi using silicon technology. It features a TO-247-3 through-hole package and operates with a drain-source voltage of 30V. The device supports a continuous drain current of 117A at 25°C and exhibits a maximum on-resistance of 4 milliohms. It functions as an enhancement mode transistor with a gate-source voltage limit of 20V. Thermal performance includes a power dissipation rating of 2.5W in free air, with an operating temperature range spanning from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

Utilizes neutron transmutation doped silicon for narrow resistivity distribution and improved electrical characteristic consistency.
Features a fast but soft recovery body diode suitable for bridge circuit applications.
Designed with high avalanche energy capability for robust operation under inductive load conditions.

Single FETs, MOSFETs Applications

Power supply circuits
Inductive load switching
PWM motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm RoHS compliance status via official manufacturer documentation. Check for end-of-life notifications or process change announcements that may affect long-term availability. Ensure thermal management design matches the specified power dissipation limits. Validate package dimensions against PCB footprint requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling in a through-hole configuration. Consider the TO-247-3 package for superior heat dissipation compared to surface-mount alternatives. Evaluate the 30V rating against system voltage peaks to ensure adequate margin. Assess gate drive requirements against the 20V maximum gate-source voltage specification.

Single FETs, MOSFETs Part Context

This part belongs to the NTD series of power MOSFETs from onsemi, which leverage neutron transmutation doping for enhanced performance. The series targets high-power applications where consistent electrical characteristics and reliability are critical. The NTD4810N-1G represents a specific variant optimized for 30V operations with high current capacity.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter overlaps before replacing. Ensure thermal resistance and package dimensions match existing board layouts.

Single FETs, MOSFETs FAQ

What type of silicon technology is used in the NTD4810N-1G?

It uses neutron transmutation doped (NTD) silicon, which provides a narrow resistivity range and low radial gradient for consistent electrical characteristics.