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NTHD4P02FT1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET/SCHOTTKY P-CH 20V CHIPFET. Review the specifications below when checking this part for your BOM.
The NTHD4P02FT1 is a dual P-Channel ChipFET power MOSFET integrated with a Schottky barrier diode, manufactured by onsemi. It features a -20V drain-source voltage rating and supports a continuous drain current of -3A. The device exhibits a maximum on-resistance of 155mΩ at Vgs = -4.5V. Packaged in an 8-SMD flat lead configuration, it operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via the manufacturer's Material Composition Declaration. Check for Product Change Notifications regarding manufacturing site or material updates. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.
Select this component for designs needing integrated rectification alongside P-channel switching. Evaluate thermal performance based on the 155mΩ on-resistance under expected load currents. Consider the 8-SMD package dimensions for PCB layout constraints. Verify gate drive voltage levels align with the specified threshold characteristics for reliable switching.
This part belongs to onsemi’s ChipFET family, which combines multiple semiconductor functions into small surface-mount packages. The integration of a Schottky diode with P-channel MOSFETs reduces component count and board space compared to discrete solutions. This architecture is typical for efficient power delivery systems in portable and industrial electronics.
NTHD4401PT1G is a documented alternative offering similar dual P-channel MOSFET functionality with comparable voltage ratings.
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NTHD4P02FT1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET/SCHOTTKY P-CH 20V CHIPFET.…
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