NTHL020N090SC1

Single FETs, MOSFETs Overview

The NTHL020N090SC1 is a Silicon Carbide (SiC) MOSFET from the EliteSiC series, manufactured by onsemi. It features an N-Channel configuration in a TO-247-3L package. Key electrical parameters include a drain-source breakdown voltage of 900 V and a continuous drain current of 118 A at 25°C case temperature. The device exhibits a typical on-resistance of 20 mΩ at VGS = 15 V and 16 mΩ at VGS = 18 V. Additional specifications include a total gate charge of 196 nC, a threshold voltage of 4.3 V, and an effective output capacitance of 296 pF. It supports a maximum power dissipation of 484 W and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate charge capability reduces switching losses and driver requirements.
• Low effective output capacitance minimizes capacitive switching energy loss.
• High thermal stability with a maximum operating junction temperature of 175°C.
• Manufactured using silicon carbide technology for superior performance over traditional silicon.

Single FETs, MOSFETs Applications

• Uninterruptible Power Supplies (UPS)
• DC-DC Converters
• Boost Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant upon ordering. Datasheet references indicate both TO-247-3L and TO-247-4L configurations exist within similar part numbers. Confirm the pinout matches the target circuit design to ensure compatibility. Check for RoHS compliance status and halide-free certification if required by specific manufacturing standards. Ensure the supplier provides official documentation matching the exact suffix.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion applications requiring low conduction losses. The 20 mΩ on-resistance at 15 V gate drive suits designs prioritizing thermal management. Consider the 196 nC gate charge when designing the gate driver circuit to optimize switching speed. Verify that the 900 V rating aligns with the system's peak voltage stresses. Evaluate the TO-247-3L footprint against available PCB space and thermal pad requirements.

Single FETs, MOSFETs Part Context

This device belongs to onsemi’s EliteSiC portfolio, designed for advanced power electronics. It utilizes silicon carbide material properties to achieve higher breakdown voltages and better thermal conductivity than silicon counterparts. The product line targets industrial and automotive markets demanding high reliability and efficiency. The specific model represents a balance between low on-resistance and manageable gate charge for general-purpose high-power switching.

Single FETs, MOSFETs Replacement Considerations

The NVH4L020N090SC1 is a related variant in the same family but uses a TO-247-4L package. Verify pinout compatibility before substitution, as the additional source terminal in the 4L package may require PCB layout adjustments. Other EliteSiC devices with similar voltage and resistance ratings should be evaluated based on specific thermal and switching requirements.