NTMSD6N303R2SG

Single FETs, MOSFETs Overview

The NTMSD6N303R2SG is a single N-Channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 6 A. Its typical on-resistance (Rds(on)) is 32 mΩ at Vgs = 10 V, with a maximum rating of 0.032 Ω. The gate-source voltage range is ±20 V. Thermal performance includes a power dissipation (Pd) of 2 W and an operating temperature range from -55 °C to +150 °C. Switching characteristics include turn-on delay times of 9 ns and 13 ns, and turn-off delay times of 45 ns and 22 ns.

Single FETs, MOSFETs Feature Summary

• Designed for low voltage, high speed switching applications
• Ultra-low on-resistance provides higher efficiency and extends battery life

Single FETs, MOSFETs Applications

• Low voltage power management circuits
• High speed DC-DC converter topologies
• Battery-powered equipment requiring efficient switching

Single FETs, MOSFETs Procurement Notes

Verify the component status as discontinued or obsolete through official manufacturer channels before finalizing design-in decisions. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any product change notifications affecting pinout or electrical parameters. Validate availability of equivalent alternatives if long-term supply is required.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 30 V N-Channel MOSFET with a 6 A current capability in an SOIC-8 footprint. The 32 mΩ on-resistance makes it suitable for applications prioritizing conduction loss reduction. Verify that the gate drive voltage aligns with the specified 10 V test condition for optimal Rds(on) performance. Consider the 2 W power dissipation limit and thermal resistance when determining heat sinking requirements for the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the NTMSD series of dual-element MOSFETs, although configured here as a single channel device within the SOIC-8 package. It is categorized under onsemi's standard power transistor lineup designed for general-purpose switching. The component represents a silicon-based solution distinct from wide-bandgap technologies like GaN or SiC found in other manufacturer portfolios.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.