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NTPF360N80S3Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 800V 13A TO220FP. Review the specifications below when checking this part for your BOM.
The NTPF360N80S3Z is a single N-channel silicon MOSFET from the SUPERFET III series, designed for through-hole mounting in TO-220 packages. It features an 800 V drain-source breakdown voltage and a maximum continuous drain current of 13 A. The device exhibits a low on-resistance of 360 mΩ at room temperature, with a gate threshold voltage of 3.8 V and a total gate charge of 25.3 nC. It supports a maximum power dissipation of 31 W and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix Z against official datasheets to confirm RoHS compliance status and lead time requirements. Confirm package dimensions match TO-220AB specifications before integration. Ensure sourcing channels provide valid traceability documentation for quality assurance purposes.
Select this component when system requirements demand high voltage blocking capability combined with moderate current handling. The 360 mΩ resistance offers a balance between conduction loss and cost. Verify that the driving circuit can supply sufficient gate charge without excessive delay.
This part belongs to onsemi's SUPERFET III family, which utilizes advanced trench gate technology. The NTPF series specifically targets general-purpose high-voltage applications requiring robust performance in standard through-hole packages for ease of assembly.
Direct substitutes include NTPF360N65S3H for lower voltage applications or NTPF450N80S3Z for surface-mount needs. Verify pinout compatibility and thermal characteristics before substitution.
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