Single FETs, MOSFETs NTPF360N80S3Z product image

NTPF360N80S3Z

$3.03
  • Description:MOSFET N-CH 800V 13A TO220FP
  • Series:SuperFET® III
  • Mfr:onsemi
  • Package:Tube

SKU:062b768e7603 Category: Brand:

  
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NTPF360N80S3Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 800V 13A TO220FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTPF360N80S3Z

  • Description:MOSFET N-CH 800V 13A TO220FP
  • Series:SuperFET® III
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:360mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id:3.8V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs:25.3 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1143 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):31W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220FP
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for NTPF360N80S3Z

NTPF360N80S3Z

Single FETs, MOSFETs Overview

The NTPF360N80S3Z is a single N-channel silicon MOSFET from the SUPERFET III series, designed for through-hole mounting in TO-220 packages. It features an 800 V drain-source breakdown voltage and a maximum continuous drain current of 13 A. The device exhibits a low on-resistance of 360 mΩ at room temperature, with a gate threshold voltage of 3.8 V and a total gate charge of 25.3 nC. It supports a maximum power dissipation of 31 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • SUPERFET III technology enables high-performance switching with optimized internal structure.
  • Enhanced thermal stability allows reliable operation across extended industrial temperature ranges.
  • Low on-resistance minimizes conduction losses during steady-state operation.

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converter circuits
  • Industrial motor control systems
  • Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix Z against official datasheets to confirm RoHS compliance status and lead time requirements. Confirm package dimensions match TO-220AB specifications before integration. Ensure sourcing channels provide valid traceability documentation for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Select this component when system requirements demand high voltage blocking capability combined with moderate current handling. The 360 mΩ resistance offers a balance between conduction loss and cost. Verify that the driving circuit can supply sufficient gate charge without excessive delay.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's SUPERFET III family, which utilizes advanced trench gate technology. The NTPF series specifically targets general-purpose high-voltage applications requiring robust performance in standard through-hole packages for ease of assembly.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include NTPF360N65S3H for lower voltage applications or NTPF450N80S3Z for surface-mount needs. Verify pinout compatibility and thermal characteristics before substitution.

NTPF360N80S3ZNTPF360N80S3Z
$3.03
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