Single FETs, MOSFETs NTR4501NT3 product image

NTR4501NT3

  • Description:MOSFET N-CH 20V 3.2A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:86e7759a6beb Category: Brand:

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NTR4501NT3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 20V 3.2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTR4501NT3

  • Description:MOSFET N-CH 20V 3.2A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.25W (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for NTR4501NT3

NTR4501NT3

Single FETs, MOSFETs Overview

The NTR4501NT3 is a surface-mount N-channel Power MOSFET manufactured by onsemi. It features a Drain-Source Breakdown Voltage (Vds) of 20 V and supports a Continuous Drain Current (Id) of 3.2 A at ambient temperature. The device exhibits a maximum Drain-Source On-Resistance (Rds(on)) of 85 mOhms. It is housed in a SOT-23-3 package, also referred to as TO-236AB. The component is designed for high-voltage applications requiring efficient switching performance within a compact footprint.

Single FETs, MOSFETs Feature Summary

  • N-channel configuration optimized for low-side switching applications
  • Low on-resistance for improved power efficiency
  • Compact SOT-23-3 surface-mount packaging

Single FETs, MOSFETs Applications

  • High-voltage switching circuits
  • Power management modules
  • Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'NT3' corresponds to the required tape-and-reel quantity and packaging format during procurement. Confirm that the SOT-23-3 package dimensions align with the target PCB layout constraints. Ensure the 20 V rating meets the system voltage requirements with appropriate derating margins for reliability.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V N-channel MOSFET is required with a continuous current capability of 3.2 A. The 85 mOhm Rds(on) specification makes it suitable for applications prioritizing conduction loss reduction. The SOT-23-3 package is ideal for space-constrained designs where standard through-hole or larger surface-mount packages cannot fit.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the Power MOSFET category. It utilizes standard silicon planar technology typical for low-voltage switching devices. The SOT-23-3 package is a widely used industry-standard outline for small-signal and power transistors, facilitating automated assembly and widespread availability across manufacturing supply chains.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 20 V, 3.2 A N-channel MOSFETs in SOT-23-3 packages. Verify pinout compatibility and thermal characteristics before substitution. Check datasheets for equivalent Rds(on) and gate charge specifications to ensure circuit performance parity.

NTR4501NT3NTR4501NT3

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